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2N4128

Texas Instruments

2N4128 by Texas Instruments

The Texas Instruments 2N4128 is an NPN RF BJT with a max. collector-emitter voltage of 40V and max. power dissipation of 40W. Ideal for very high frequency band applications, it has a nominal transition frequency of 400MHz and can handle a max. collector current of 5A.

Median Price

$104.210

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 1 parts In-Stock

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Vyrian

USA . 6,480 parts In-Stock

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Digiode

USA . 2,265 parts In-Stock

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Electronic Expediters

USA . 23 parts In-Stock

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ECAB

Sweden . 5 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1 parts In-Stock

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Holdelec - ElecDif-Pro

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Resion

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Parana Technologies

USA . 768 parts In-Stock

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$1.148

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$1.963

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768

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DigiPath Technology Company

USA . 388 parts In-Stock

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$1.264

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$1.163

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ChromeModa Solutions

Germany . 6,729 parts In-Stock

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$1.290

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$1.058

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IDEA Electronic Components Group

UK . 2,072 parts In-Stock

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One Stop Electronics

USA . 914 parts In-Stock

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$5.050

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AZTECH Wire

Italy . 438 parts In-Stock

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$7.999

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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Northwest PG Solutions

USA . 429 parts In-Stock

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Native Components

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Corphita

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Overview

Looking for a reliable and high-quality RF Power Bipolar Junction Transistor (BJT)? Look no further than the 2N4128 by Texas Instruments. With a reputation for excellence in manufacturing, Texas Instruments delivers top-of-the-line products that are trusted by professionals worldwide. The 2N4128 is perfect for applications in the very high-frequency band, offering a maximum power dissipation of 40W and a maximum collector-emitter voltage of 40V. Trust Texas Instruments to provide you with the quality and performance you need for your projects.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile for various applications.

Configuration: SINGLE

Single configuration simplifies circuit design and offers easy integration into existing systems.

Maximum Power Dissipation (Abs): 40 W

High power dissipation capability allows the transistor to handle high power levels without overheating, ensuring durability and reliability.

Maximum Collector-Emitter Voltage: 40 V

High collector-emitter voltage rating provides robustness and protection against voltage spikes, enhancing the overall performance of the transistor.

Nominal Transition Frequency (fT): 400 MHz

High transition frequency indicates fast switching speeds, making this transistor suitable for high-frequency applications such as radio frequency amplification.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) 2N4128 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Base Capacitance:

18 pF

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

10

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-117

JESD-30 Code:

R-XRPM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N4128 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-058-1182, 5961000581182, 5961-01-077-8571, 5961010778571

NIIN

000581182, 010778571

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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