Loading...

SD1728-15

STMicroelectronics

SD1728-15 by STMicroelectronics

SD1728-15 by STMicroelectronics is an NPN RF power BJT designed for amplifier applications. It features a max collector-emitter voltage of 55V, a collector current of 40A, and operates in the very high frequency band. Its flat terminal design allows for easy surface mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,148 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,148

-

-

-

-

Anansix

USA . 1,381 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,381

-

-

-

-

Vyrian

USA . 68 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

68

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 315 parts In-Stock

1+ parts

$0.829

100+ parts

-

1k+ parts

$0.746

10k+ parts

-

315

$0.829

-

$0.746

-

MKK Technologies

India . 112 parts In-Stock

1+ parts

$1.559

100+ parts

-

1k+ parts

-

10k+ parts

-

112

$1.559

-

-

-

DigiPath Technology Company

USA . 112 parts In-Stock

1+ parts

$1.559

100+ parts

-

1k+ parts

-

10k+ parts

-

112

$1.559

-

-

-

Corphita

USA . 2,480 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,480

-

-

-

-

Parana Technologies

USA . 198 parts In-Stock

1+ parts

-

100+ parts

$0.991

1k+ parts

-

10k+ parts

-

198

-

$0.991

-

-

Overview

Elevate your projects with the SD1728-15 from STMicroelectronics, where quality meets innovation. This NPN RF Power BJT is designed for superior amplification, ensuring reliable performance in high-frequency applications. With its robust plastic/epoxy package and surface mount capability, it’s perfect for modern designs. Trust in STMicroelectronics’ reputation for excellence to enhance your systems, delivering unparalleled efficiency and power handling that sets you apart in the market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, making the transistor reliable in various applications.

Polarity or Channel Type: NPN

As an NPN transistor, this device can efficiently drive higher current loads, making it suitable for power amplification applications.

Configuration: SINGLE

The single configuration offers simplicity in circuit design, which can lead to lower costs and easier implementation.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor is ideal for applications requiring signal boosting, enhancing overall performance.

Surface Mount: YES

Being surface mount compatible allows for a more compact PCB design, which is essential in modern electronics where space is limited.

Package Shape: ROUND

The round package shape aids in efficient heat dissipation, contributing to better performance and longevity of the device.

Terminal Form: FLAT

Flat terminals enhance soldering efficiency during assembly, improving production throughput and reliability.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Operating in the very high frequency band makes this transistor suitable for RF applications, enhancing its versatility in communication technologies.

No. of Terminals: 4

With 4 terminals, this transistor provides flexibility in circuit design and greater functionality while maintaining compactness.

Package Style (Meter): FLANGE MOUNT

Flange mount packaging allows for better mechanical stability and heatsink attachment, ensuring effective thermal management.

Maximum Collector-Base Capacitance: 360 pF

A low collector-base capacitance ensures faster switching times and high-frequency performance, making it ideal for RF applications.

Maximum Collector-Emitter Voltage: 55 V

Handling up to 55 V makes this transistor suitable for a wide range of high-power applications while ensuring safe operation.

Transistor Element Material: SILICON

Silicon as the base material offers excellent thermal and electrical properties, contributing to reliability and efficiency in performance.

Maximum Collector Current (IC): 40 A

The ability to handle up to 40 A of collector current allows for use in demanding applications where high power delivery is crucial.

Terminal Position: RADIAL

Radial terminal position simplifies layout and assembly in printed circuit boards, enhancing overall design efficiency.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1728-15 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

360 pF

Maximum Collector-Emitter Voltage:

55 V

Configuration:

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-PRFM-F4

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SD1728-15 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19