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SD1731(TH562)

STMicroelectronics

SD1731(TH562) by STMicroelectronics

SD1731(TH562) by STMicroelectronics is a high-performance NPN RF power BJT designed for very high frequency applications. It features a max power dissipation of 233 W, operates up to 150 °C, and supports collector currents of 20 A. Ideal for demanding RF amplification tasks in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,049 parts In-Stock

1+ parts

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3,049

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Anansix

USA . 2,703 parts In-Stock

1+ parts

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2,703

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Vyrian

USA . 2,301 parts In-Stock

1+ parts

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2,301

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 272 parts In-Stock

1+ parts

$1.612

100+ parts

-

1k+ parts

$1.451

10k+ parts

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272

$1.612

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$1.451

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MKK Technologies

India . 331 parts In-Stock

1+ parts

$3.031

100+ parts

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331

$3.031

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DigiPath Technology Company

USA . 331 parts In-Stock

1+ parts

$3.031

100+ parts

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331

$3.031

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Parana Technologies

USA . 938 parts In-Stock

1+ parts

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$1.927

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938

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$1.927

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Corphita

USA . 236 parts In-Stock

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236

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Overview

Elevate your projects with the SD1731(TH562) by STMicroelectronics, a top-tier NPN RF Power BJT that excels in high-frequency applications. Renowned for unmatched quality and reliability, STMicroelectronics ensures this transistor delivers impressive power handling and thermal performance. Its compact design is perfect for both surface-mount and flange-mount setups, making it ideal for telecommunications, industrial equipment, and more. Experience superior performance and efficiency that drives innovation forward!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides excellent durability and resistance to environmental factors, ensuring reliable performance in various conditions.

Polarity or Channel Type: NPN

NPN transistors are widely known for their versatility in switching and amplification applications, making this product suitable for a broad range of electronic circuits.

Configuration: SINGLE

A single configuration simplifies circuit design and integration into various applications without added complexity from multiple devices.

Surface Mount: YES

Being a surface mount device allows for a compact design and easier integration into modern PCB layouts, saving space and enhancing manufacturability.

Package Shape: ROUND

The round package shape is ideal for applications that require robust mechanical stability and efficient heat dissipation.

Terminal Form: FLAT

Flat terminals facilitate easier soldering and reliable electrical connections, contributing to overall performance and longevity.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Designed for very high frequency applications, this product is ideal for RF circuits, ensuring optimal performance in communication devices.

No. of Terminals: 4

Having four terminals allows for versatile configurations, making it suitable for different applications and maximizing circuit design flexibility.

Maximum Power Dissipation (Abs): 233 W

A maximum power dissipation of 233 W means this transistor can handle substantial energy without overheating, ensuring reliability in high-power applications.

Package Style (Meter): FLANGE MOUNT

Flange mount packaging enhances mechanical stability and heat dissipation, making it suitable for industrial applications where robustness is critical.

Minimum DC Current Gain (hFE): 15

A minimum DC current gain of 15 indicates decent amplification capabilities, allowing for effective signal processing in low-power applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this product can operate in extreme environments, enhancing its reliability across a range of applications.

Maximum Collector-Emitter Voltage: 55 V

Supporting up to 55 V collector-emitter voltage makes this transistor suitable for many applications, including automotive and RF systems requiring higher voltage handling.

Transistor Element Material: SILICON

Silicon as the element material offers excellent conductivity and efficiency, ensuring consistent performance and widespread compatibility with existing technologies.

Maximum Collector Current (IC): 20 A

A maximum collector current of 20 A allows this transistor to handle substantial load currents, making it ideal for power amplification in various electronic devices.

Terminal Position: RADIAL

Radial terminal position enhances the versatility of mounting options, making it easier to integrate into different circuit designs.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1731(TH562) attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

55 V

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-PRFM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Element Material:

SILICON

Trade Compliance

SD1731(TH562) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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