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5962F0721806VXC

Renesas Electronics

5962F0721806VXC by Renesas Electronics

PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Collector Current (IC): .0113 A; JESD-30 Code: R-CDFP-F16;

Median Price

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Lifecycle Status

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In-Stock Inventory

< 1k

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USA . 1,336 parts In-Stock

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1,336

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Supply Digital

USA . 819 parts In-Stock

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819

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Native Components

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100

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Technical Specifications

RF Power Bipolar Junction Transistors (BJT) 5962F0721806VXC attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

8 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-CDFP-F16

JESD-609 Code:

e4

No. of Elements:

5

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1.25 W

Qualification:

Qualified

Reference Standard:

MIL-38535; RH - 300K Rad(Si)

Surface Mount:

YES

Terminal Finish:

Gold (Au)

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

5962F0721806VXC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Renesas Electronics

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