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MC3346D

Onsemi

MC3346D by Onsemi

MC3346D by Onsemi is a NPN BJT with 5 elements, 14 terminals, and max. IC of 0.05A. It operates at 550MHz fT and has VCE of 15V. Ideal for RF applications due to its small outline package style and Gull Wing terminal form.

Median Price

$0.655

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

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Vyrian

USA . 1,424 parts In-Stock

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American Microsemiconductor Inc.

USA . 656 parts In-Stock

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Digiode

USA . 2,477 parts In-Stock

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Semtec, LLC

USA . 2,316 parts In-Stock

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A2Z Electronics, Inc.

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Prism Electronics

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Electronic Expediters

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Extreme Components

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Inland Empire Components Inc.

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Q Components

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Legend Electronics Inc.

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Classic Components Corporation

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Mil-Aero Solutions, Inc.

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Component Electronics Inc.

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Digital Electronic Gebert Verwaltungs UG

Germany . 10 parts In-Stock

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LWI Electronics Inc

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Corohmni

South Africa . 116 parts In-Stock

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TANS Electronics

Latvia . 8,295 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

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SupplyDigital Components

Austria . 1,528 parts In-Stock

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Kepictronics

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Perfect Parts

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UHIMA Technologies

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Corphita

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Overview

Upgrade your RF power amplifier designs with the MC3346D by Onsemi. This high-quality NPN bipolar junction transistor offers superior performance and reliability for a wide range of applications. Its advanced design allows for seamless integration into complex configurations, making it ideal for demanding projects. With its small outline package and surface mount capability, this transistor is perfect for space-constrained designs. Trust in Onsemi's reputation for excellence and choose the MC3346D for your next RF power amplifier project. Unlock the full potential of your designs with this innovative component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection for the internal components of the transistor, making it durable and reliable in various environmental conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used and well-suited for a wide range of applications, making this transistor versatile and compatible with many circuit designs.

Surface Mount: YES

Surface mount transistors are easier to work with during assembly and reduce the overall size of the circuit, making this product ideal for compact electronic devices.

Maximum Collector-Emitter Voltage: 15 V

With a relatively high maximum voltage rating, this transistor can handle higher voltage applications without the risk of damage, increasing its reliability in demanding situations.

Nominal Transition Frequency (fT): 550 MHz

A high transition frequency indicates that this transistor can switch at a fast rate, making it suitable for high-frequency applications such as RF amplification or signal processing.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) MC3346D attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e0

No. of Elements:

5

No. of Terminals:

14

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MC3346D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5962-14-443-8189, 5962144438189

NIIN

144438189

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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