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NESG270034-AZ

Renesas Electronics

NESG270034-AZ by Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Maximum Collector Current (IC): .75 A; Qualification: Not Qualified;

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In-Stock Inventory

< 1k

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USA . 80 parts In-Stock

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Technical Specifications

RF Power Bipolar Junction Transistors (BJT) NESG270034-AZ attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Case Connection:

EMITTER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

7.2 V

Configuration:

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e6

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP RF Small Signal

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON GERMANIUM

Trade Compliance

NESG270034-AZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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