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MSC83305

STMicroelectronics

MSC83305 by STMicroelectronics

STMicroelectronics' MSC83305 is a NPN RF BJT with 17.6W power dissipation, hFE of 30, and 0.7A collector current. Ideal for S Band applications like amplifiers due to its ceramic-metal package and high operating temperature of 200 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 1,287 parts In-Stock

1+ parts

-

100+ parts

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1,287

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Vyrian

USA . 1,219 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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1,219

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Digiode

USA . 736 parts In-Stock

1+ parts

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736

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 153 parts In-Stock

1+ parts

$1.326

100+ parts

-

1k+ parts

$1.193

10k+ parts

-

153

$1.326

-

$1.193

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MKK Technologies

India . 711 parts In-Stock

1+ parts

$2.493

100+ parts

-

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-

711

$2.493

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DigiPath Technology Company

USA . 711 parts In-Stock

1+ parts

$2.493

100+ parts

-

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711

$2.493

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Corphita

USA . 2,790 parts In-Stock

1+ parts

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2,790

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Parana Technologies

USA . 1,447 parts In-Stock

1+ parts

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100+ parts

$1.585

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1,447

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$1.585

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Overview

Unleash the power of cutting-edge technology with the MSC83305 RF Power Bipolar Junction Transistor from STMicroelectronics. Crafted with precision and excellence, this NPN transistor offers unrivaled performance in amplifier applications within the S Band frequency range. With a maximum power dissipation of 17.6W and a minimum DC current gain of 30, this transistor is designed to deliver superior functionality and reliability. Experience seamless integration and exceptional results with the MSC83305, setting new standards in RF power transistors.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Ceramic and metal-sealed cofired package body material provides excellent thermal conductivity and resistance to high temperatures, enhancing the durability and reliability of the transistor.

Polarity or Channel Type: NPN

NPN polarity type allows for easy integration into existing circuitry and compatibility with a wide range of applications.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity in applications that require a single transistor.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, providing high power amplification with low distortion.

Package Shape: ROUND

Round package shape allows for easy mounting and installation in various applications.

Terminal Form: FLAT

Flat terminal form ensures secure connections and facilitates ease of soldering.

Highest Frequency Band: S BAND

S band frequency range allows for high-frequency operation, making it suitable for applications requiring fast switching speeds and high bandwidth.

Maximum Power Dissipation (Abs): 17.6 W

High maximum power dissipation rating ensures the transistor can handle high-power applications without overheating, increasing its reliability and performance.

Package Style (Meter): FLANGE MOUNT

Flange mount package style ensures easy mounting and secure attachment to circuit boards or heatsinks.

Minimum DC Current Gain (hFE): 30

High minimum DC current gain ensures efficient current amplification, providing reliable performance in various applications.

Maximum Operating Temperature: 200 °C

High maximum operating temperature allows the transistor to withstand high-temperature environments and operation, ensuring stability and longevity.

Maximum Collector-Base Capacitance: 7.5 pF

Low collector-base capacitance minimizes signal distortion and enhances high-frequency performance in amplifier applications.

Transistor Element Material: SILICON

Silicon transistor element material offers high efficiency, low noise, and reliable performance for a wide range of applications.

Maximum Collector Current (IC): 0.7 A

High maximum collector current rating allows for handling high currents, making it suitable for power amplification applications.

Terminal Position: RADIAL

Radial terminal position facilitates easy mounting and connectivity in various circuit configurations.

Case Connection: BASE

Base case connection ensures proper grounding and heat dissipation, enhancing the overall performance and reliability of the transistor.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) MSC83305 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

BASE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

7.5 pF

Configuration:

Minimum DC Current Gain (hFE):

30

Highest Frequency Band:

S BAND

JESD-30 Code:

O-CRFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MSC83305 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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