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NE69039

Renesas Electronics

NE69039 by Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .3 A; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 6 V;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) NE69039 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

6 V

Configuration:

Minimum DC Current Gain (hFE):

60

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.2 W

Minimum Power Gain (Gp):

5 dB

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

NE69039 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

Renesas Electronics

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