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SD1446

STMicroelectronics

SD1446 by STMicroelectronics

SD1446 by STMicroelectronics is an NPN RF Power BJT with a max collector-emitter voltage of 18V and a max collector current of 12A. It is designed for ultra-high frequency band applications, featuring a plastic/epoxy package body material and radial terminal position. Ideal for amplifier circuits in the UHF band, this transistor has a single configuration with 4 terminals in a round flange mount package style.

Median Price

$56.650

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 7 parts In-Stock

1+ parts

$56.650

100+ parts

$46.350

1k+ parts

-

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7

$56.650

$46.350

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-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,664 parts In-Stock

1+ parts

$53.818

100+ parts

-

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-

10k+ parts

-

4,664

$53.818

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DF Sales Co.

USA . 1 parts In-Stock

1+ parts

$56.000

100+ parts

-

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1

$56.000

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DF Sales Co.

USA . 1 parts In-Stock

1+ parts

$56.000

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-

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-

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1

$56.000

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-

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American Microsemiconductor Inc.

USA . 27 parts In-Stock

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$132.000

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-

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27

$132.000

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Vyrian

USA . 8,140 parts In-Stock

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8,140

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Anansix

USA . 2,685 parts In-Stock

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2,685

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GES GmbH

Germany . 6 parts In-Stock

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6

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Fibra_Brandt Electronic GMBH

Germany . 3 parts In-Stock

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3

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.979

100+ parts

$0.891

1k+ parts

$0.803

10k+ parts

-

100

$0.979

$0.891

$0.803

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IDEA Electronic Components Group

UK . 151 parts In-Stock

1+ parts

$1.810

100+ parts

-

1k+ parts

$1.629

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151

$1.810

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$1.629

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MKK Technologies

India . 1,926 parts In-Stock

1+ parts

$3.403

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1,926

$3.403

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DigiPath Technology Company

USA . 1,926 parts In-Stock

1+ parts

$3.403

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1,926

$3.403

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Corphita

USA . 1,616 parts In-Stock

1+ parts

$50.985

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1,616

$50.985

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Parana Technologies

USA . 2,292 parts In-Stock

1+ parts

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100+ parts

$2.164

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2,292

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$2.164

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Overview

Elevate your RF power amplifier designs with the SD1446 from STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-quality products that set the standard for performance and reliability. The SD1446 is a versatile NPN RF power bipolar junction transistor that excels in ultra-high frequency applications, making it ideal for amplifiers. With its advanced technology and superior construction, this transistor offers unmatched value and benefits to customers looking for high-performance components for their projects. Choose the SD1446 and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

The single configuration simplifies the design and integration of the transistor into electronic circuits, making it efficient and easy to use.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor is optimized to provide high amplification performance.

Package Shape: ROUND

The round package shape allows for easy mounting and integration into electronic systems, providing flexibility in design.

Terminal Form: FLAT

The flat terminal form enables secure connections and easy soldering, ensuring reliable performance in electronic circuits.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

The transistor is optimized for use in ultra-high frequency applications, providing excellent performance in high-frequency circuits.

No. of Terminals: 4

With 4 terminals, this transistor offers flexibility in connection options and can be easily integrated into various circuit designs.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for secure mounting and easy installation, making it suitable for a wide range of applications.

Maximum Collector-Base Capacitance: 300 pF

The low collector-base capacitance of 300 pF ensures minimal signal distortion and high-frequency performance in amplifier circuits.

Maximum Collector-Emitter Voltage: 18 V

With a maximum collector-emitter voltage of 18 V, this transistor can handle high voltage levels, making it suitable for a variety of applications.

Transistor Element Material: SILICON

The silicon material used in the transistor element provides excellent performance characteristics such as high gain and low power dissipation.

Maximum Collector Current (IC): 12 A

The high maximum collector current of 12 A allows for high-power amplification applications, making this transistor a reliable choice for demanding circuits.

Terminal Position: RADIAL

With a radial terminal position, this transistor allows for easy and secure connections in electronic circuits, ensuring reliable performance.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1446 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

300 pF

Maximum Collector-Emitter Voltage:

18 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-PRFM-F4

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

BIP RF Small Signal

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SD1446 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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