Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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PTB23003XA by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 0.5 A, operates up to 200 °C, and offers a min power gain of 8.75 dB in the C band. Its ceramic, metal-sealed package ensures durability in demanding environments.
Median Price
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Vyrian
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One Stop Electronics
$38.050
UNI Independent Distributors
Corphita
The durable ceramic and metal-sealed co-fired package ensures excellent thermal management and reliability, making this transistor suitable for high-performance applications.
NPN configuration provides high electron mobility, making this transistor efficient for amplification and switching applications.
The single transistor configuration offers simplicity and ease of integration into circuits, ideal for straightforward applications.
Designed specifically for amplification, this transistor can enhance signals effectively, making it suitable for RF applications.
The surface mount capability allows for more compact designs and easier assembly in modern electronic devices.
A minimum power gain of 8.75 dB indicates good signal amplification, ensuring better performance in RF circuits.
The rectangular package shape can facilitate efficient space utilization on printed circuit boards.
Flat terminal form allows for better soldering and enhanced connection integrity, reducing the risk of mechanical failure.
Operating in the C band makes this transistor ideal for communication applications involving radar, satellite, and broadband systems.
A two-terminal setup simplifies circuit design and implementation, making it versatile for various applications.
Flange mount design provides robust mounting options, ensuring stability and reliability during operation.
Operating safely at up to 200 °C enables this transistor to perform reliably in high-temperature environments.
With a maximum collector-emitter voltage of 15 V, this transistor is suited for low to medium voltage applications, enhancing safety and performance.
Silicon material offers excellent electrical characteristics and thermal stability, enhancing the overall performance of the transistor.
A maximum collector current of 0.5 A provides adequate power handling for small to medium load applications.
The dual terminal position provides flexibility in circuit design, making it easier to integrate into various layouts.
A base connection ensures efficient signal input for amplification, making the transistor responsive and effective in its application.
RF Power Bipolar Junction Transistors (BJT) PTB23003XA attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors
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PTB23003XA Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
OHN3140U
Optek Technology
MAGNETIC FIELD SENSOR,HALL EFFECT; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Output Type: ANALOG CURRENT; Package Shape or Style: RECTANGULAR; Output Range: 25mA;
LL4148
Promax-johnton
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
MMSZ5245BT1G
Onsemi
MMSZ5245BT1G by Onsemi is a Zener diode with 15V nominal reference voltage, 8.5mA test current, and 16 ohm dynamic impedance. It is used in applications requiring precise voltage regulation in a compact SMD package for temperatures ranging from -55 to 150°C.
CRCW080510R0FKEA
Vishay Intertechnology
Vishay Intertechnology's CRCW080510R0FKEA is a fixed resistor with 10 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for surface mount applications in automotive electronics due to its AEC-Q200 reference standard and operating voltage of 150 V. Operating temperature range from -55 to 155 °C ensures reliability in various environments.
FDN306P
FDN306P by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 2.6A and 0.04 ohm RDS(on), suitable for small outline packages at temperatures ranging from -55 to 150°C.
E8WSDC12-32.768KTR
Ecliptek
PARALLEL - FUNDAMENTAL; Mounting Feature: SURFACE MOUNT; Frequency Tolerance: 20 ppm; Aging: 3 PPM/YEAR; Load Capacitance: 12.5 pF; Nominal Operating Frequency: .032768 MHz;
1N4148WS
Vishay Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
KSZ9031RNXIC
Microchip Technology
KSZ9031RNXIC by Microchip Technology is a network interface chip with 1 transceiver. It operates at a data rate of 1000 Mbps and has a nominal voltage of 1.2V. This chip is commonly used in industrial applications requiring Ethernet connectivity.
STM32H750VBT6
STMicroelectronics
STM32H750VBT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, offering 20 timers and 16 DMA channels. It features 2 DAC and 16 ADC channels, suitable for industrial applications requiring high-speed processing up to 48 MHz. With extensive connectivity options like FDCAN, Ethernet, and USB, it provides versatile solutions in a compact package.
Bytesonic Electronics
2N2222A
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum Operating Temperature: -65 Cel; Terminal Position: BOTTOM;
Telcom Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
AH180-WG-7
Diodes Incorporated
AH180-WG-7 by Diodes Inc. is a magnetic field sensor with 1.5mT hysteresis, 0.30V output range, and 9mA max operating current. Ideal for applications requiring non-inverting analog voltage output in a compact rectangular package suitable for surface mount installations.
CRG0805F10R
TE Connectivity
TE Connectivity's CRG0805F10R is a 10 ohm fixed resistor with 1% tolerance and 0.125 W power dissipation. It features thick film technology, SMT package style, and matte tin over nickel terminal finish. Ideal for surface mount applications in electronics, offering a temperature coefficient of 200 ppm/°C and operating voltage of 150 V.
1N4148
Unitrode
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM2931AZ-5.0RAG
LM2931AZ-5.0RAG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V nominal output voltage, 0.1A max output current, and 0.6V max dropout voltage. Ideal for applications requiring stable voltage regulation in temperature-sensitive environments up to 150°C.
Fairchild Semiconductor
SS14
Dc Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M85049/85-08W02
Glenair
CONNECTOR ACCESSORY; MIL Conformity: YES; Material: ALUMINIUM ALLOY; Associated Backshell Military - Specifications: MIL-DTL-38999; Shell Sizes: 08; DIN Conformity: NO;
ERJ3EKF1002V
Panasonic
Panasonic's ERJ3EKF1002V is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. It operates b/w -55 to 155 °C and is ideal for surface mount applications in automotive electronics due to AEC-Q200 compliance.
RX1214B300Y
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 630 W; Maximum Collector Current (IC): 21 A; Package Shape: RECTANGULAR;
SD1407
SD1407 by STMicroelectronics is a NPN RF Power BJT with 270W power dissipation, 36V max collector-emitter voltage, and 20A max collector current. Ideal for high-frequency band applications, it features a single configuration in a round plastic/epoxy package with flange mount style.
933994050114
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; Terminal Form: FLAT; JESD-30 Code: R-CDFM-F2;
AM0912-080
STMicroelectronics' AM0912-080 is a NPN RF BJT transistor with 8.4 dB min power gain, ideal for L Band applications. It has a max power dissipation of 220 W and can handle up to 7 A collector current, suitable for high-power switching operations in various electronic devices.
2N6080
Microsemi
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 12 W; Maximum Collector Current (IC): 1 A;
AM81720-012
STMicroelectronics' AM81720-012 is an NPN RF BJT with 7.4 dB min power gain, ideal for amplifier applications in L Band frequencies. It has a max power dissipation of 31.8W, operating up to 200 °C, and a DC current gain of at least 15 hFE.
PPC5001T
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .25 A; Terminal Form: FLAT; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
SD1463
SD1463 by STMicroelectronics is an NPN RF Power BJT with 30V VCE, 15A IC, and ultra-high frequency band. It is a single-configured transistor for amplifier applications in a plastic/epoxy package suitable for surface mount with 8 terminals.
BLT50,115
The NXP Semiconductors BLT50,115 is a RF Power BJT transistor with NPN polarity and single configuration. It features a min power gain of 10 dB, operates in the ultra high frequency band, and has a max power dissipation of 2 W. Ideal for amplifier applications, this transistor has a max operating temperature of 175°C and can handle a collector current of 0.5 A.
BLV30
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1150 MHz; Maximum Collector Current (IC): 1.5 A; Terminal Position: RADIAL;
LLE18300X
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 6 A; Package Shape: RECTANGULAR;
5962F0721805VXC
Renesas Electronics
NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Minimum DC Current Gain (hFE): 40;
MRF1150MB
M/a-com Technology Solutions
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 583 W; Minimum DC Current Gain (hFE): 10; Package Shape: ROUND;
SD1433
SD1433 by STMicroelectronics is a NPN RF BJT with 4 terminals, suitable for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND. It has a max power dissipation of 58W, operating temperature up to 175 °C, and collector current of 2.5A.
BLW80
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1250 MHz; Maximum Collector Current (IC): 1 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
BLY93A
BLY93A by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 3 A, operates up to 200 °C, and offers a min power gain of 9 dB in the very high frequency band. Its round, flat package ensures efficient thermal management.
AM83135-005
STMicroelectronics AM83135-005 is a NPN RF BJT transistor with 5.2 dB min power gain, suitable for S Band applications. It has a max power dissipation of 40 W and can handle up to 1.8 A collector current, making it ideal for switching operations in high-frequency circuits.
SD1439
SD1439 by STMicroelectronics is a NPN RF BJT transistor with 4 terminals, suitable for amplifier applications in the UHF band. It has a max power dissipation of 8.75W, hFE of 15, and VCE of 24V. Ideal for high-frequency amplification due to its silicon element material and radial terminal position.
SD1729(TH416)
SD1729(TH416) by STMicroelectronics is an NPN RF power BJT designed for high-frequency applications. It features a max collector current of 12 A, operates up to 200 °C, and supports voltages up to 35 V. Ideal for surface mount designs in communication systems.
BLX69A
BLX69A by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 3.5 A, operates up to 200 °C, and achieves a min power gain of 4 dB in the ultra-high frequency band. Its round, flat package ensures efficient thermal management.
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PTB23002U
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .25 A; Qualification: Not Qualified;
PTB23005X
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8.7 W; Maximum Collector Current (IC): .75 A; Terminal Position: RADIAL;
PTB23003X
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 7.6 W; Maximum Collector Current (IC): .5 A; Highest Frequency Band: C BAND;
PTB23006U
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 11 W; Maximum Collector Current (IC): .75 A; Transistor Application: AMPLIFIER;
PTB23001X
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 4.2 W; Maximum Collector Current (IC): .25 A; Case Connection: BASE;
PTB20141
Infineon Technologies
NPN; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Terminal Finish: MATTE TIN; Transistor Element Material: SILICON; Terminal Position: DUAL;
PTB20081
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Transistor Element Material: SILICON; Terminal Position: DUAL;
PTB20151
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 7.7 A; Terminal Position: DUAL; Package Style (Meter): FLANGE MOUNT;
PTB20170
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6.7 A; Terminal Form: FLAT; No. of Elements: 1;
PTB20046
NPN; Surface Mount: YES; Maximum Collector Current (IC): .7 A; Highest Frequency Band: L BAND; Transistor Element Material: SILICON; JESD-30 Code: R-CDFM-F6;
PTB20082
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.4 A; JESD-30 Code: R-CDFM-F2; Transistor Application: AMPLIFIER;
PTB20181
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.1 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Additional Features: HIGH RELIABILITY;
PTB20216
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1 A; No. of Elements: 1; Transistor Application: AMPLIFIER;
PTB20111
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 20 A; JESD-30 Code: R-CDFM-F2; Transistor Application: AMPLIFIER;
PTB20228
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1 A; Package Style (Meter): CHIP CARRIER; Maximum Collector-Emitter Voltage: 20 V;
PTB20017
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 25 A; JESD-30 Code: R-CDFM-F4; JESD-609 Code: e3;
PTB20074
NPN; Surface Mount: YES; Maximum Collector Current (IC): 1.4 A; JESD-30 Code: R-CDFM-F6; Transistor Element Material: SILICON; Qualification: Not Qualified;
PTB20134
NPN; Surface Mount: YES; Maximum Collector Current (IC): 8 A; Terminal Position: DUAL; Transistor Application: AMPLIFIER; Case Connection: EMITTER;
PTB20264
NPN; Configuration: SINGLE; Maximum Collector Current (IC): 2 A; Terminal Finish: MATTE TIN; Maximum Collector-Emitter Voltage: 22 V; Transistor Application: AMPLIFIER;
PTB20156
Ericsson Power Modules Ab
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Case Connection: BASE; No. of Terminals: 2;
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