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PTB23003XA

NXP Semiconductors

PTB23003XA by NXP Semiconductors

PTB23003XA by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 0.5 A, operates up to 200 °C, and offers a min power gain of 8.75 dB in the C band. Its ceramic, metal-sealed package ensures durability in demanding environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,288 parts In-Stock

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4,288

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Anansix

USA . 1,849 parts In-Stock

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1,849

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Digiode

USA . 1,727 parts In-Stock

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1,727

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Distributors (Availability)

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One Stop Electronics

USA . 924 parts In-Stock

1+ parts

$38.050

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924

$38.050

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UNI Independent Distributors

Spain . 7,241 parts In-Stock

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Corphita

USA . 2,421 parts In-Stock

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Overview

Experience unparalleled performance with the PTB23003XA from NXP Semiconductors, a leader in innovative RF solutions. This advanced RF Power BJT amplifier is designed for precision and reliability, ensuring superior signal quality in communications. Its robust ceramic and metal-sealed construction withstands extreme conditions, making it ideal for high-frequency applications. Elevate your projects with this dependable component that delivers exceptional power gain and thermal stability, enhancing your system's efficiency and longevity.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The durable ceramic and metal-sealed co-fired package ensures excellent thermal management and reliability, making this transistor suitable for high-performance applications.

Polarity or Channel Type: NPN

NPN configuration provides high electron mobility, making this transistor efficient for amplification and switching applications.

Configuration: SINGLE

The single transistor configuration offers simplicity and ease of integration into circuits, ideal for straightforward applications.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor can enhance signals effectively, making it suitable for RF applications.

Surface Mount: YES

The surface mount capability allows for more compact designs and easier assembly in modern electronic devices.

Minimum Power Gain (Gp): 8.75 dB

A minimum power gain of 8.75 dB indicates good signal amplification, ensuring better performance in RF circuits.

Package Shape: RECTANGULAR

The rectangular package shape can facilitate efficient space utilization on printed circuit boards.

Terminal Form: FLAT

Flat terminal form allows for better soldering and enhanced connection integrity, reducing the risk of mechanical failure.

Highest Frequency Band: C BAND

Operating in the C band makes this transistor ideal for communication applications involving radar, satellite, and broadband systems.

No. of Terminals: 2

A two-terminal setup simplifies circuit design and implementation, making it versatile for various applications.

Package Style (Meter): FLANGE MOUNT

Flange mount design provides robust mounting options, ensuring stability and reliability during operation.

Maximum Operating Temperature: 200 °C

Operating safely at up to 200 °C enables this transistor to perform reliably in high-temperature environments.

Maximum Collector-Emitter Voltage: 15 V

With a maximum collector-emitter voltage of 15 V, this transistor is suited for low to medium voltage applications, enhancing safety and performance.

Transistor Element Material: SILICON

Silicon material offers excellent electrical characteristics and thermal stability, enhancing the overall performance of the transistor.

Maximum Collector Current (IC): 0.5 A

A maximum collector current of 0.5 A provides adequate power handling for small to medium load applications.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit design, making it easier to integrate into various layouts.

Case Connection: BASE

A base connection ensures efficient signal input for amplification, making the transistor responsive and effective in its application.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) PTB23003XA attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

BASE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Highest Frequency Band:

C BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Minimum Power Gain (Gp):

8.75 dB

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PTB23003XA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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