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MX0912B350Y

NXP Semiconductors

MX0912B350Y by NXP Semiconductors

MX0912B350Y by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector-emitter voltage of 20V, operates up to 200 °C, and offers a min power gain of 7 dB. Ideal for L-band surface mount designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,880 parts In-Stock

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2,880

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Digiode

USA . 2,004 parts In-Stock

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2,004

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Vyrian

USA . 1,982 parts In-Stock

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1,982

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Distributors (Availability)

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One Stop Electronics

USA . 1,541 parts In-Stock

1+ parts

$45.050

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1,541

$45.050

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UNI Independent Distributors

Spain . 4,609 parts In-Stock

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4,609

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Corphita

USA . 194 parts In-Stock

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194

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Overview

Elevate your designs with the MX0912B350Y by NXP Semiconductors, a premier choice in RF Power BJTs. Renowned for exceptional quality and reliability, NXP is a leader in innovative semiconductor solutions. This versatile transistor excels in amplifier applications, ensuring superior performance across L-band frequencies. With its robust build and durable materials, it guarantees longevity and stability, delivering unmatched value that empowers your projects to thrive.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The durable ceramic and metal-sealed co-fired body provide excellent thermal performance and reliability, making it ideal for high-power applications.

Polarity or Channel Type: NPN

Being an NPN transistor, it is well-suited for amplification and switching applications in a wide range of circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, allowing for easier implementation in various applications.

Transistor Application: AMPLIFIER

Designed for amplification, this transistor offers efficient performance in audio, RF, and other signal processing applications.

Surface Mount: YES

The surface mount capability supports compact designs, saving board space and allowing for high-density layouts.

Minimum Power Gain (Gp): 7 dB

A power gain of 7 dB ensures sufficient amplification for many signal types, making it a versatile choice for various applications.

Package Shape: RECTANGULAR

The rectangular package shape is conducive to efficient layout and integration in electronic circuit boards.

Terminal Form: FLAT

Flat terminal design facilitates easy soldering and provides a stable connection, enhancing reliability in performance.

Highest Frequency Band: L BAND

Operates efficiently in the L band, making it suitable for telecommunications and broadcasting applications.

No. of Terminals: 2

The simple two-terminal design reduces complexity, making it user-friendly and adaptable for various circuit applications.

Package Style (Meter): FLANGE MOUNT

Flange mount style allows for secure attachment to circuit boards, improving device stability during operation.

Maximum Operating Temperature: 200 °C

A high maximum operating temperature of 200 °C ensures reliable operation in demanding environments.

Maximum Collector-Emitter Voltage: 20 V

The 20 V maximum collector-emitter voltage caters to a range of applications, maintaining performance without risk of breakdown.

Transistor Element Material: SILICON

Silicon material ensures good thermal stability and efficient operation, suitable for high-frequency performance.

Terminal Position: DUAL

Dual terminal position enhances flexibility in circuit layout, allowing for streamlined designs.

Case Connection: BASE

With base case connection, it allows for straightforward and reliable integration into amplifier circuits.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) MX0912B350Y attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

BASE

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Minimum Power Gain (Gp):

7 dB

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MX0912B350Y Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-394-0071, 5961013940071

NIIN

013940071

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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