Loading...

MSC82005

Asi Semiconductor

MSC82005 by Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 29 W; Maximum Collector Current (IC): 1 A; Maximum Operating Temperature: 200 Cel;

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,049 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,049

-

-

-

-

Digiode

USA . 2,377 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,377

-

-

-

-

Anansix

USA . 408 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

408

-

-

-

-

LWI Electronics Inc

India . 6 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,910 parts In-Stock

1+ parts

$1.742

100+ parts

-

1k+ parts

$1.568

10k+ parts

-

1,910

$1.742

-

$1.568

-

MKK Technologies

India . 566 parts In-Stock

1+ parts

$3.277

100+ parts

-

1k+ parts

-

10k+ parts

-

566

$3.277

-

-

-

DigiPath Technology Company

USA . 566 parts In-Stock

1+ parts

$3.277

100+ parts

-

1k+ parts

-

10k+ parts

-

566

$3.277

-

-

-

Corphita

USA . 2,211 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,211

-

-

-

-

Parana Technologies

USA . 1,192 parts In-Stock

1+ parts

-

100+ parts

$2.083

1k+ parts

-

10k+ parts

-

1,192

-

$2.083

-

-

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) MSC82005 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Asi Semiconductor

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

10 pF

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

L BAND

JESD-30 Code:

O-CRFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MSC82005 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-302-4131, 5961013024131

NIIN

013024131

Manufacturer Highlights

Asi Semiconductor

ASI Semiconductor, Inc. (ASI) designs, supplies and markets state-of-the-art high power, pulsed RF transistors and pallets. We proudly serve thousands of customers in dozens of countries, specifically focusing on pulsed RF commercial applications for avionics, radar, medical and industrial applications. We are introducing VIMOS technology to meet the needs and requirements of this unique marketplace. We have supported this industry for over 30 years which has included several governments and Fortune 500 customers. ASI was founded in 1979 and is ISO 9001 certified. Our headquarters is located in North Hollywood, CA, USA.

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.