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BLV101A

NXP Semiconductors

BLV101A by NXP Semiconductors

BLV101A by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a min power gain of 8.5 dB, operates at ultra-high frequencies, and supports up to 10 A collector current. Its robust ceramic-metal sealed package ensures reliability in demanding environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 4,931 parts In-Stock

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Vyrian

USA . 4,521 parts In-Stock

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Anansix

USA . 269 parts In-Stock

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269

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Native Components

USA . 597 parts In-Stock

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$0.614

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597

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Northwest PG Solutions

USA . 1,432 parts In-Stock

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$0.676

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$0.676

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One Stop Electronics

USA . 1,469 parts In-Stock

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$45.050

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Corphita

USA . 3,633 parts In-Stock

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UNI Independent Distributors

Spain . 2,611 parts In-Stock

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Overview

Unlock unparalleled performance with the BLV101A RF Power Bipolar Junction Transistor from NXP Semiconductors. Renowned for its reliability and cutting-edge technology, this robust device excels in amplifier applications, delivering exceptional power gain and efficiency. With a durable ceramic and metal-sealed package, it thrives in demanding environments. Elevate your projects with NXP's industry-leading quality, ensuring superior results and lasting value in every signal amplification challenge.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The robust construction ensures durability and reliability in demanding applications.

Polarity or Channel Type: NPN

NPN transistors are excellent for high-speed switching applications, making this transistor suitable for various amplifier designs.

Configuration: SINGLE

A single configuration simplifies the design, making it easier to integrate into various circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplification, it meets the demands of audio and RF applications effectively.

Surface Mount: YES

Surface mount capability allows for compact designs and automated assembly processes.

Minimum Power Gain (Gp): 8.5 dB

An 8.5 dB power gain ensures sufficient amplification for weak signals.

Package Shape: RECTANGULAR

The rectangular shape aids in efficient space utilization on circuit boards.

Terminal Form: FLAT

Flat terminals provide a secure connection and facilitate better thermal management.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for applications that operate in the UHF range, ensuring excellent performance in wireless communications.

No. of Terminals: 6

The 6 terminals allow for versatile connections, making integration into more complex circuits feasible.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides a stable mounting option and improves heat dissipation.

Minimum DC Current Gain (hFE): 15

A minimum hFE of 15 indicates good efficiency in current amplification, enhancing overall circuit performance.

Maximum Operating Temperature: 200 °C

A high operating temperature allows this transistor to be used in high-temperature environments without failure.

Maximum Collector-Emitter Voltage: 27 V

With a maximum collector-emitter voltage of 27 V, this transistor can handle higher voltage applications safely.

Transistor Element Material: SILICON

Silicon is a standard semiconductor material that provides excellent reliability and performance characteristics.

Maximum Collector Current (IC): 10 A

A maximum collector current of 10 A supports high power applications without risking damage.

Terminal Position: DUAL

Dual terminal position enhances the flexibility of the circuit layout for various design requirements.

Case Connection: ISOLATED

An isolated case connection ensures safety and prevents unwanted interactions with other circuit components.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BLV101A attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

27 V

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-CDFM-F6

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Minimum Power Gain (Gp):

8.5 dB

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BLV101A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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