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BLY91A

Asi Semiconductor

BLY91A by Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 17 W; Maximum Collector Current (IC): .75 A;

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Digiode

USA . 5,547 parts In-Stock

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Vyrian

USA . 3,968 parts In-Stock

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Anansix

USA . 2,155 parts In-Stock

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Manotoh

Italy . 11 parts In-Stock

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Sinequanon

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Parana Technologies

USA . 1,767 parts In-Stock

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$0.271

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$1.532

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DigiPath Technology Company

USA . 533 parts In-Stock

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$0.298

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$0.274

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ChromeModa Solutions

Germany . 3,869 parts In-Stock

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$0.304

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$0.249

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IDEA Electronic Components Group

UK . 2,348 parts In-Stock

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$0.304

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$0.274

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AZTECH Wire

Italy . 576 parts In-Stock

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$18.223

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One Stop Electronics

USA . 1,384 parts In-Stock

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$34.050

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Corphita

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Northwest PG Solutions

USA . 1,706 parts In-Stock

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Native Components

USA . 1,438 parts In-Stock

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UNI Independent Distributors

Spain . 465 parts In-Stock

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Assy Fe

Spain . 2 parts In-Stock

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Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BLY91A attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Asi Semiconductor

Specs

Case Connection:

EMITTER

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

15 pF

Maximum Collector-Emitter Voltage:

36 V

Configuration:

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-CRPM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BLY91A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Asi Semiconductor

ASI Semiconductor, Inc. (ASI) designs, supplies and markets state-of-the-art high power, pulsed RF transistors and pallets. We proudly serve thousands of customers in dozens of countries, specifically focusing on pulsed RF commercial applications for avionics, radar, medical and industrial applications. We are introducing VIMOS technology to meet the needs and requirements of this unique marketplace. We have supported this industry for over 30 years which has included several governments and Fortune 500 customers. ASI was founded in 1979 and is ISO 9001 certified. Our headquarters is located in North Hollywood, CA, USA.

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