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1214-55

Microsemi

1214-55 by Microsemi

Microsemi's 1214-55 is a NPN RF BJT transistor for switching applications. With a max IC of 8A, it operates in L Band frequencies up to 200°C. This single-configured transistor comes in a ceramic-metal package with flat terminals for surface mounting.

Median Price

$209.710

Lifecycle Status

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< 1k

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Nova Conductors

Japan . 18 parts In-Stock

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$209.710

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18

$209.710

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Vyrian

USA . 277 parts In-Stock

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277

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AZTECH Wire

Italy . 277 parts In-Stock

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$13.419

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277

$13.419

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Aranea Global

USA . 100 parts In-Stock

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$205.516

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$197.295

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100

$205.516

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$197.295

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Continental Prestige Electronics

USA . 7,372 parts In-Stock

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$209.710

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7,372

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$205.516

Netroflash

USA . 2,000 parts In-Stock

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$209.710

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$205.516

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2,000

$209.710

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Component Stockers USA

USA . 25 parts In-Stock

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$3,684.160

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25

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Argo Parts USA

USA . 5,710 parts In-Stock

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5,710

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Overview

Enhance your RF power applications with the 1214-55 by Microsemi, a top-of-the-line RF Power Bipolar Junction Transistor. Manufactured with precision and expertise, this single NPN transistor offers unparalleled performance in switching operations within the L Band frequency range. Its ceramic, metal-sealed cofired package ensures durability and reliability, making it the ideal choice for high-power RF applications. Trust Microsemi to deliver quality, value, and innovation in every product, including the 1214-55. Elevate your RF power solutions with Microsemi today!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Provides excellent thermal properties and durability, making the transistor suitable for high power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications due to their ability to amplify signals and control high power devices.

Configuration: SINGLE

Simplifies circuit design and ensures easy integration into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient control of electrical signals.

Surface Mount: YES

Enables easy and convenient mounting on circuit boards, saving space and facilitating automated manufacturing processes.

Highest Frequency Band: L BAND

Suitable for applications in the L band frequency range, providing reliable performance in communication systems.

No. of Terminals: 2

Simple two-terminal design for easy connectivity and integration into electronic circuits.

Package Style (Meter): FLANGE MOUNT

Facilitates secure mounting and stable connection of the transistor in electronic assemblies.

Maximum Operating Temperature: 200 °C

Can withstand high operating temperatures, ensuring reliable performance in demanding environments.

Transistor Element Material: SILICON

Silicon transistors offer high efficiency and performance, making them suitable for a wide range of applications.

Maximum Collector Current (IC): 8 A

Capable of handling high collector currents, making it suitable for power amplification and switching applications.

Terminal Finish: TIN LEAD

Tin-lead terminal finish ensures good solderability and reliable electrical connections.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting and easy integration into various circuit configurations.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) 1214-55 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Microsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

8 A

Configuration:

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

1214-55 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Microsemi

Microsemi Corporation, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California.

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