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BLV38

NXP Semiconductors

BLV38 by NXP Semiconductors

BLV38 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 290 W, operates at very high frequencies, and offers a min power gain of 8 dB. Ideal for demanding RF environments, it ensures reliable performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 3,248 parts In-Stock

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Vyrian

USA . 2,901 parts In-Stock

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Anansix

USA . 1,711 parts In-Stock

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One Stop Electronics

USA . 1,212 parts In-Stock

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UNI Independent Distributors

Spain . 8,148 parts In-Stock

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Corphita

USA . 1,087 parts In-Stock

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Native Components

USA . 787 parts In-Stock

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Northwest PG Solutions

USA . 293 parts In-Stock

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Overview

Unlock unparalleled performance with the BLV38 by NXP Semiconductors, a pinnacle in RF Power Bipolar Junction Transistors. Crafted from premium materials and designed for high efficiency, this powerhouse excels in amplifier applications, delivering exceptional gain even in demanding environments. Trust NXP's legacy of quality and innovation to elevate your designs, enhancing reliability and maximizing output for your next project. Experience the difference today!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed materials enhances durability and thermal management, making it suitable for high-power applications.

Polarity or Channel Type: NPN

NPN topology is widely used and compatible with many amplifier configurations, providing versatility in design.

Configuration: COMMON EMITTER, 2 ELEMENTS

This configuration is well-known for its high gain and linearity, making it ideal for amplification applications.

Transistor Application: AMPLIFIER

Designed for amplification, this product is well-suited for RF and audio applications, ensuring effective signal amplification.

Surface Mount: YES

Surface mount capability allows for compact PCB design and automated manufacturing processes.

Minimum Power Gain (Gp): 8 dB

A minimum power gain of 8 dB ensures efficient signal amplification, suitable for a range of RF applications.

Package Shape: RECTANGULAR

The rectangular shape aids in space-efficient layouts and effective heat dissipation in PCB designs.

Terminal Form: FLAT

Flat terminals facilitate easier soldering and reliable connections in electronic circuits.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Operating in the very high frequency band allows for utilization in advanced communication technologies, including RF transceivers.

No. of Elements: 2

Having two elements enables greater flexibility and increased performance in amplification circuits.

No. of Terminals: 5

Five terminals provide multiple connection options, supporting a variety of circuit configurations.

Package Style (Meter): FLANGE MOUNT

Flange mounting provides robust physical support, ensuring stability during operation.

Maximum Power Dissipation Ambient: 290 W

A high power dissipation capability allows for use in demanding applications without overheating.

Minimum DC Current Gain (hFE): 15

A minimum hFE of 15 indicates strong current amplification, ideal for enhancing weak input signals.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, this transistor can function reliably in harsh environments.

Maximum Collector-Emitter Voltage: 40 V

A maximum voltage rating of 40 V makes it suitable for various circuit applications requiring higher voltage tolerances.

Transistor Element Material: SILICON

Silicon is a standard semiconductor material known for its efficiency and reliability in electronic components.

Maximum Collector Current (IC): 10 A

The ability to handle up to 10 A of collector current makes this transistor exceptionally capable for high-load applications.

Terminal Position: DUAL

Dual terminal positions facilitate diverse circuit designs and easier integration into existing systems.

Case Connection: ISOLATED

An isolated case connection enhances safety and performance, preventing unintended circuit interference.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BLV38 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-CDFM-F5

No. of Elements:

2

No. of Terminals:

5

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

290 W

Minimum Power Gain (Gp):

8 dB

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BLV38 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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