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MRF858S

Freescale Semiconductor

MRF858S by Freescale Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Terminal Position: DUAL; Package Style (Meter): FLATPACK;

Median Price

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3

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Vyrian

USA . 4,450 parts In-Stock

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Digiode

USA . 2,894 parts In-Stock

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Anansix

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One Stop Electronics

USA . 2,134 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,770 parts In-Stock

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Corphita

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Metaverse IC Inc.

Canada . 600 parts In-Stock

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600

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Kepictronics

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UNI Independent Distributors

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Technical Specifications

RF Power Bipolar Junction Transistors (BJT) MRF858S attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Freescale Semiconductor

Specs

Additional Features:

WITH EMITTER BALLASTING RESISTORS

Maximum Collector-Base Capacitance:

8 pF

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-CDFP-F6

No. of Elements:

1

No. of Terminals:

6

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLATPACK

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MRF858S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Freescale Semiconductor

On December 7, 2015, NXP completed the merger with Freescale Semiconductor; the merged company continued its operation as NXP Semiconductors N.V.

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