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MRF658

Motorola

MRF658 by Motorola

MRF658 by Motorola is a NPN RF BJT transistor with 4.15 dB min power gain, suitable for amplifier applications in the ultra-high frequency band. It has a max power dissipation of 175 W, operates at up to 150°C, and can handle a collector current of 15 A.

Median Price

$125.000

Lifecycle Status

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4

In-Stock Inventory

< 1k

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American Microsemiconductor Inc.

USA . 1 parts In-Stock

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$125.000

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Nova Conductors

Japan . 15 parts In-Stock

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15

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GES GmbH

Germany . 5 parts In-Stock

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Vectronix, Inc

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Aztec Data Supply Inc.

USA . 500 parts In-Stock

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$0.951

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500

$0.951

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Ampacity Inc.

Singapore . 778 parts In-Stock

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$19.050

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Authorized Procurement Solutions

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2,500

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Continental Prestige Electronics

USA . 1,807 parts In-Stock

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Argo Parts USA

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Aranea Global

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RC Electronics

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Overview

Upgrade your RF amplifier with the MRF658 by Motorola, a top-of-the-line RF Power Bipolar Junction Transistor that delivers unmatched performance and reliability. Manufactured by industry leader Motorola, this NPN transistor is designed for applications in the ultra-high frequency band, offering a minimum power gain of 4.15 dB and a maximum power dissipation of 175 W. With a flat terminal form and a round package shape, this transistor is easy to install and provides exceptional power handling capabilities. Trust the MRF658 to enhance your amplifier's performance and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Provides durability and heat resistance, making the product suitable for high-power applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in amplifier circuits, making this product compatible with a variety of amplifier applications.

Minimum Power Gain (Gp): 4.15 dB

With a minimum power gain of 4.15 dB, this transistor can amplify signals effectively, making it a reliable choice for amplifier circuits.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed for operating in the ultra high frequency band, this product is suitable for high-speed RF applications.

Maximum Power Dissipation (Abs): 175 W

With a maximum power dissipation of 175 W, this transistor can handle high power levels without overheating, ensuring reliability in demanding conditions.

Maximum Collector-Emitter Voltage: 16.5 V

The high maximum collector-emitter voltage rating of 16.5 V allows for robust performance in applications with varying voltage levels.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) MRF658 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Motorola

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

220 pF

Maximum Collector-Emitter Voltage:

16.5 V

Configuration:

Minimum DC Current Gain (hFE):

40

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-CXFM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

175 W

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

4.15 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

UNSPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MRF658 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Motorola

Motorola Solutions, Inc., is an American video equipment, telecommunications equipment, software, systems and services provider that succeeded Motorola, Inc., following the spinoff of the mobile phone division into Motorola Mobility in 2011. The company is headquartered in Chicago, Illinois.

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