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MRF648

Motorola

MRF648 by Motorola

MRF648 by Motorola is a NPN RF BJT with 4.4 dB power gain, ideal for amplifier applications in the UHF band. It has a max power dissipation of 175 W, operates at up to 150°C, and features a ceramic-metal package with flat terminals for surface mounting.

Median Price

$149.570

Lifecycle Status

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4

In-Stock Inventory

< 1k

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American Microsemiconductor Inc.

USA . 10 parts In-Stock

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$149.570

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Nova Conductors

Japan . 600 parts In-Stock

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600

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ACDS - Activité Composants Distribution Service

France . 7 parts In-Stock

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GES GmbH

Germany . 3 parts In-Stock

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Aztec Data Supply Inc.

USA . 200 parts In-Stock

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$0.503

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200

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Ampacity Inc.

Singapore . 1,515 parts In-Stock

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$36.050

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Aranea Global

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Benley Electronics

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Cyclops Electronics Ltd (Excess)

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Overview

Unlock the power of cutting-edge technology with the MRF648 by Motorola. This RF Power Bipolar Junction Transistor offers unparalleled quality and reliability, thanks to its trusted manufacturer. Ideal for amplifier applications in the ultra-high frequency band, this NPN transistor delivers a minimum power gain of 4.4 dB, ensuring optimal performance. With a maximum power dissipation of 175 W and a maximum collector current of 11 A, the MRF648 provides unmatched value and benefits to customers looking for top-of-the-line components. Elevate your projects with the superior capabilities of the MRF648.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides good thermal conductivity, which helps in effectively dissipating heat generated during operation.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and are suitable for a wide range of applications.

Minimum Power Gain (Gp): 4.4 dB

With a minimum power gain of 4.4 dB, this transistor can amplify signals efficiently.

Maximum Power Dissipation (Abs): 175 W

The high maximum power dissipation of 175 W allows the transistor to handle high power levels without overheating.

Maximum Collector-Base Capacitance: 150 pF

Having a low collector-base capacitance of 150 pF can improve high-frequency performance and reduce signal distortion.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) MRF648 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Motorola

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

150 pF

Maximum Collector-Emitter Voltage:

16 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-CXFM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

175 W

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

4.4 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

UNSPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MRF648 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

NSN

5961-01-097-3422, 5961010973422

NIIN

010973422

Manufacturer Highlights

Motorola

Motorola Solutions, Inc., is an American video equipment, telecommunications equipment, software, systems and services provider that succeeded Motorola, Inc., following the spinoff of the mobile phone division into Motorola Mobility in 2011. The company is headquartered in Chicago, Illinois.

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