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MRF648

Asi Semiconductor

MRF648 by Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 11 A; Transistor Application: AMPLIFIER;

Median Price

$149.570

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 10 parts In-Stock

1+ parts

$149.570

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10

$149.570

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Nova Conductors

Japan . 600 parts In-Stock

1+ parts

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600

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ACDS - Activité Composants Distribution Service

France . 7 parts In-Stock

1+ parts

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7

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GES GmbH

Germany . 3 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 200 parts In-Stock

1+ parts

$0.503

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200

$0.503

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Ampacity Inc.

Singapore . 1,515 parts In-Stock

1+ parts

$36.050

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1,515

$36.050

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Aranea Global

USA . 100 parts In-Stock

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100

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Benley Electronics

USA . 22 parts In-Stock

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22

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Cyclops Electronics Ltd (Excess)

UK . 7 parts In-Stock

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Technical Specifications

RF Power Bipolar Junction Transistors (BJT) MRF648 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Asi Semiconductor

Specs

Case Connection:

EMITTER

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

150 pF

Maximum Collector-Emitter Voltage:

16 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-CXFM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

UNSPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MRF648 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-097-3422, 5961010973422

NIIN

010973422

Manufacturer Highlights

Asi Semiconductor

ASI Semiconductor, Inc. (ASI) designs, supplies and markets state-of-the-art high power, pulsed RF transistors and pallets. We proudly serve thousands of customers in dozens of countries, specifically focusing on pulsed RF commercial applications for avionics, radar, medical and industrial applications. We are introducing VIMOS technology to meet the needs and requirements of this unique marketplace. We have supported this industry for over 30 years which has included several governments and Fortune 500 customers. ASI was founded in 1979 and is ISO 9001 certified. Our headquarters is located in North Hollywood, CA, USA.

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