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MRF660

Motorola

MRF660 by Motorola

Motorola's MRF660 is an NPN RF BJT transistor with 5.4 dB power gain, ideal for amplifier applications in the UHF band. It has a max power dissipation of 25W, operates at up to 150°C, and features a collector-emitter voltage of 16V.

Median Price

$23.192

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Overview

Unlock superior performance with the MRF660 by Motorola, a top-quality RF Power Bipolar Junction Transistor designed for amplification in the ultra-high-frequency band. Offering a minimum power gain of 5.4 dB and a maximum power dissipation of 25W, this transistor delivers unparalleled efficiency and reliability. With its NPN polarity, single configuration, and through-hole terminal form, the MRF660 is ideal for a wide range of amplifier applications. Trust Motorola's legacy of excellence and invest in the MRF660 for unmatched value and benefits in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and makes the transistor suitable for a wide range of environmental conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and switching applications, offering good performance and reliability.

Configuration: SINGLE

Single configuration makes it easy to implement in circuits without the need for additional components for matching pairs.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying signals.

Minimum Power Gain (Gp): 5.4 dB

With a minimum power gain of 5.4 dB, this transistor can provide significant amplification of input signals.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into circuit designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections in circuit boards.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for applications requiring operation in the ultra-high frequency band, ensuring compatibility with high-frequency signals.

Maximum Power Dissipation (Abs): 25 W

Capable of dissipating up to 25 watts of power, making it suitable for high-power applications.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides mechanical stability and ease of mounting in various setups.

Minimum DC Current Gain (hFE): 20

A minimum DC current gain of 20 ensures sufficient amplification of input signals.

Maximum Operating Temperature: 150 °C

Can operate at temperatures up to 150°C, suitable for use in various environments.

Maximum Collector-Base Capacitance: 25 pF

Low collector-base capacitance of 25 pF helps in reducing signal distortion and improving high-frequency performance.

Maximum Collector-Emitter Voltage: 16 V

With a maximum collector-emitter voltage of 16V, the transistor can handle higher voltages without breakdown.

Transistor Element Material: SILICON

Silicon material offers good electrical properties and reliability, making the transistor suitable for a wide range of applications.

Maximum Collector Current (IC): 2.4 A

Capable of handling collector currents up to 2.4A, suitable for applications requiring higher current loads.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and ensures reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies the connection and integration of the transistor into circuit designs.

Case Connection: EMITTER

Emitter case connection provides easy identification and proper orientation during assembly in circuits.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) MRF660 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Motorola

Specs

Case Connection:

EMITTER

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

25 pF

Maximum Collector-Emitter Voltage:

16 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

5.4 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MRF660 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Motorola

Motorola Solutions, Inc., is an American video equipment, telecommunications equipment, software, systems and services provider that succeeded Motorola, Inc., following the spinoff of the mobile phone division into Motorola Mobility in 2011. The company is headquartered in Chicago, Illinois.

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