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MAX2602ESA+T

Analog Devices

MAX2602ESA+T by Analog Devices

MAX2602ESA+T by Analog Devices is a NPN BJT transistor with 8 terminals, operating at 150 °C. It has a max collector-emitter voltage of 15V and can handle a collector current of 1.2A. Ideal for amplifier applications in the ultra-high frequency band, it comes in a small outline package with gull wing terminals.

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6

In-Stock Inventory

1k+

MAX2602ESA+T by Analog Devices
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Vyrian

USA . 8,216 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,500 parts In-Stock

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2,500

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Digiode

USA . 2,281 parts In-Stock

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2,281

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HZD GmbH

Germany . 1,300 parts In-Stock

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Bristol Electronics

USA . 1,258 parts In-Stock

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Anansix

USA . 519 parts In-Stock

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519

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MARBEL Systems

Belgium . 694 parts In-Stock

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$1.492

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694

$1.492

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Texas Native Microelectronics

USA . 50 parts In-Stock

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$1.715

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$1.646

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$1.595

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$1.509

50

$1.715

$1.646

$1.595

$1.509

Kenton Components

USA . 18 parts In-Stock

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$2.058

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$1.811

18

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$1.811

Semicontronic

India . 1,238 parts In-Stock

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$3.050

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$2.974

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$2.958

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Ampacity Inc.

Singapore . 934 parts In-Stock

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$3.050

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934

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Qasali Group International

UK . 100 parts In-Stock

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$4.630

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$4.306

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$4.075

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$4.630

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$4.075

AZTECH Wire

Italy . 868 parts In-Stock

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$11.164

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Microchip USA

USA . 5,618 parts In-Stock

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$25.155

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One Stop Electronics

USA . 1,935 parts In-Stock

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$34.050

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QUARKTWIN TECHNOLOGY LTD

USA . 12,390 parts In-Stock

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Perfect Parts

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Kepictronics

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Corphita

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Cyclops Electronics Ltd (Excess)

UK . 2,500 parts In-Stock

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2,500

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Glotronic Ltd.

UK . 2,000 parts In-Stock

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Overview

Unlock the full potential of your RF power applications with the MAX2602ESA+T from Analog Devices. Designed with precision and expertise, this single NPN transistor with a built-in diode offers unparalleled performance in amplifier circuits. With a maximum operating temperature of 150 °C and a peak reflow temperature of 260°C, this transistor ensures reliability and durability. Whether you're working in the ultra-high-frequency band or needing a high DC current gain, the MAX2602ESA+T delivers exceptional quality and value. Trust Analog Devices to provide you with the tools you need for success in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, making it easier to handle and less prone to damage during installation and use.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification purposes, making this product suitable for amplifier applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The inclusion of a built-in diode simplifies circuit design and can improve overall efficiency of the amplifier.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and reliability in such circuits.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving time and effort during manufacturing.

Package Shape: RECTANGULAR

Rectangular package shape is space-efficient and facilitates easy placement on the PCB, maximizing use of available board space.

Terminal Form: GULL WING

Gull wing terminals provide secure and reliable connections to the PCB, reducing the risk of electrical failures or signal distortions.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operates in the ultra-high frequency band, making it suitable for high-speed and high-frequency applications where precision is critical.

No. of Terminals: 8

Having 8 terminals allows for more versatile and complex circuit designs, enabling various connectivity options and configurations.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, contributing to a more compact and efficient overall design.

Minimum DC Current Gain (hFE): 100

Minimum DC current gain of 100 ensures consistent and stable amplification performance, delivering reliable results in various applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this product can withstand high temperatures and operate reliably in challenging environments.

Maximum Collector-Emitter Voltage: 15 V

With a maximum collector-emitter voltage of 15V, this transistor can handle higher voltage levels without risk of damage or failure.

Transistor Element Material: SILICON

Silicon-based transistor element material ensures high performance, reliability, and durability in various operating conditions.

Maximum Collector Current (IC): 1.2 A

With a maximum collector current of 1.2A, this transistor can deliver sufficient power for amplification needs without exceeding its current rating.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin terminal finish provides good solderability and conductivity, ensuring reliable connections and stable performance in the circuit.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting options and compatibility with various PCB layouts, facilitating easy integration into different designs.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for up to 30 seconds, making it suitable for reflow soldering processes without risk of damage.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260 °C ensures reliable soldering and secure attachment to the PCB, guaranteeing long-term performance and durability.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) MAX2602ESA+T attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Minimum DC Current Gain (hFE):

100

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MAX2602ESA+T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

Category top products 20

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