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RZB06050W

NXP Semiconductors

RZB06050W by NXP Semiconductors

RZB06050W by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector-emitter voltage of 15V, a nominal transition frequency of 540 MHz, and operates at temperatures up to 200 °C. Its ceramic, metal-sealed package ensures reliability in ultra-high frequency settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,662 parts In-Stock

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4,662

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Vyrian

USA . 2,928 parts In-Stock

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Anansix

USA . 2,440 parts In-Stock

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2,440

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One Stop Electronics

USA . 1,043 parts In-Stock

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$35.050

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$35.050

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Corphita

USA . 3,097 parts In-Stock

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3,097

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UNI Independent Distributors

Spain . 249 parts In-Stock

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Overview

Unlock superior performance with the RZB06050W from NXP Semiconductors—a trusted name in cutting-edge technology. This RF Power BJT excels in amplifier applications, delivering remarkable power gain and stability at ultra-high frequencies. Its robust ceramic and metal-sealed design ensures reliability even in demanding environments. Elevate your projects with a product that offers unmatched quality, efficiency, and versatility—your ideal partner for high-performance electronic solutions!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic, metal-sealed co-fired package ensures durability and thermal stability, making it suitable for demanding applications.

Polarity or Channel Type: NPN

This NPN configuration is versatile and widely used in amplifier circuits, ensuring compatibility with a variety of signal types.

Configuration: SINGLE

A single configuration simplifies design and integration into circuits, ideal for compact applications.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor delivers superior signal strength and fidelity in audio and RF applications.

Surface Mount: YES

Surface mount technology allows for compact design and easy integration into modern printed circuit boards.

Minimum Power Gain (Gp): 7.5 dB

A minimum power gain of 7.5 dB indicates effective amplification, ensuring strong output signals with minimal loss.

Package Shape: RECTANGULAR

The rectangular shape optimizes space efficiency on circuit boards, enabling high-density designs.

Terminal Form: FLAT

Flat terminals simplify soldering and improve the reliability of connections, enhancing overall performance.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operating at ultra high frequencies ensures suitability for advanced communication applications, such as cellular or satellite systems.

No. of Terminals: 2

Two terminals streamline connections in simple circuits, reducing complexity and minimizing potential failure points.

Package Style (Meter): FLANGE MOUNT

Flange mount design allows for stable and robust physical mounting, ensuring reliable performance in various environments.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, this transistor is ideal for applications requiring thermal resilience and reliability.

Maximum Collector-Emitter Voltage: 15 V

A maximum collector-emitter voltage of 15 V is suitable for low-power applications, ensuring safety and reliability.

Transistor Element Material: SILICON

Silicon offers excellent properties for RF applications, including good carrier mobility and stability over a range of temperatures.

Terminal Position: DUAL

Dual terminal positioning aids in balanced circuit designs and improves performance in specific applications.

Case Connection: BASE

With base case connection, this transistor ensures efficient heat dissipation and optimal signal integrity.

Nominal Transition Frequency (fT): 540 MHz

A nominal transition frequency of 540 MHz enables effective performance in high-speed applications, ensuring clear and fast signal propagation.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) RZB06050W attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

BASE

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Minimum Power Gain (Gp):

7.5 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

RZB06050W Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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