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AJT150

Asi Semiconductor

AJT150 by Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Maximum Collector Current (IC): 16.5 A; Qualification: Not Qualified;

Median Price

$279.280

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

RS Americas

USA . 10 parts In-Stock

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$279.280

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$265.110

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Component Electronics Inc.

Canada . 1 parts In-Stock

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$173.080

100+ parts

$129.810

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$112.500

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$173.080

$129.810

$112.500

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Kempston Controls

UK . 6 parts In-Stock

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$180.940

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Nova Conductors

Japan . 10 parts In-Stock

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$204.175

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VNN

France . 870 parts In-Stock

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Electronic Supply

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Vyrian

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Powertech Controls

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Masline Electronics Inc.

USA . 2 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 1 parts In-Stock

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PC Components Company LLC

USA . 1 parts In-Stock

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Bristol Electronics

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Distributors (Availability)

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AZTECH Wire

Italy . 544 parts In-Stock

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$11.202

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Corohmni

South Africa . 187 parts In-Stock

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$11.215

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Aztec Data Supply Inc.

USA . 339 parts In-Stock

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$16.950

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$16.950

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Aranea Global

USA . 50 parts In-Stock

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$200.092

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$192.088

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Continental Prestige Electronics

USA . 5,710 parts In-Stock

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$204.175

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Argo Parts USA

USA . 2,987 parts In-Stock

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Technical Specifications

RF Power Bipolar Junction Transistors (BJT) AJT150 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Asi Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

35 V

Configuration:

Minimum DC Current Gain (hFE):

10

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

AJT150 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5920-00-012-1831, 5920000121831

NIIN

000121831

Manufacturer Highlights

Asi Semiconductor

ASI Semiconductor, Inc. (ASI) designs, supplies and markets state-of-the-art high power, pulsed RF transistors and pallets. We proudly serve thousands of customers in dozens of countries, specifically focusing on pulsed RF commercial applications for avionics, radar, medical and industrial applications. We are introducing VIMOS technology to meet the needs and requirements of this unique marketplace. We have supported this industry for over 30 years which has included several governments and Fortune 500 customers. ASI was founded in 1979 and is ISO 9001 certified. Our headquarters is located in North Hollywood, CA, USA.

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