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2SC5023B

Renesas Technology

2SC5023B by Renesas Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1000 MHz; Maximum Collector Current (IC): .2 A; Package Shape: RECTANGULAR;

Median Price

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Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 664 parts In-Stock

1+ parts

$7.704

100+ parts

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1k+ parts

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10k+ parts

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664

$7.704

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Northwest PG Solutions

USA . 1,662 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$7.550

10k+ parts

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1,662

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$7.550

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Technical Specifications

RF Power Bipolar Junction Transistors (BJT) 2SC5023B attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Renesas Technology

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

6 pF

Maximum Collector-Emitter Voltage:

100 V

Configuration:

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC5023B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Technology

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