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SD1219

Asi Semiconductor

SD1219 by Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 6.5 A;

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Digiode

USA . 3,640 parts In-Stock

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3,640

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Anansix

USA . 2,569 parts In-Stock

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Vyrian

USA . 832 parts In-Stock

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Electronics Depot

USA . 3 parts In-Stock

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IDEA Electronic Components Group

UK . 1,936 parts In-Stock

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$0.669

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$0.602

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1,936

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MKK Technologies

India . 1,852 parts In-Stock

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$1.258

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1,852

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DigiPath Technology Company

USA . 1,852 parts In-Stock

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$1.258

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Corphita

USA . 1,972 parts In-Stock

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1,972

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Parana Technologies

USA . 959 parts In-Stock

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$0.800

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959

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$0.800

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Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1219 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Asi Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

80 pF

Maximum Collector-Emitter Voltage:

35 V

Configuration:

Minimum DC Current Gain (hFE):

5

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-CRPM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SD1219 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-106-0802, 5961011060802

NIIN

011060802

Manufacturer Highlights

Asi Semiconductor

ASI Semiconductor, Inc. (ASI) designs, supplies and markets state-of-the-art high power, pulsed RF transistors and pallets. We proudly serve thousands of customers in dozens of countries, specifically focusing on pulsed RF commercial applications for avionics, radar, medical and industrial applications. We are introducing VIMOS technology to meet the needs and requirements of this unique marketplace. We have supported this industry for over 30 years which has included several governments and Fortune 500 customers. ASI was founded in 1979 and is ISO 9001 certified. Our headquarters is located in North Hollywood, CA, USA.

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