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TH430

Asi Semiconductor

TH430 by Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 330 W; Maximum Collector Current (IC): 40 A; No. of Elements: 1;

Median Price

$87.276

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,847 parts In-Stock

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$87.276

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Vyrian

USA . 8,633 parts In-Stock

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Anansix

USA . 113 parts In-Stock

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113

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ECAB

Sweden . 3 parts In-Stock

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IDEA Electronic Components Group

UK . 235 parts In-Stock

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$1.409

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$1.268

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235

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MKK Technologies

India . 1,331 parts In-Stock

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$2.650

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DigiPath Technology Company

USA . 1,331 parts In-Stock

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$2.650

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Corphita

USA . 99 parts In-Stock

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$82.683

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Parana Technologies

USA . 888 parts In-Stock

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$1.685

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888

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$1.685

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Technical Specifications

RF Power Bipolar Junction Transistors (BJT) TH430 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Asi Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

360 pF

Maximum Collector-Emitter Voltage:

55 V

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-CRFM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Element Material:

SILICON

Trade Compliance

TH430 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-842-9864, 5961008429864

NIIN

008429864

Manufacturer Highlights

Asi Semiconductor

ASI Semiconductor, Inc. (ASI) designs, supplies and markets state-of-the-art high power, pulsed RF transistors and pallets. We proudly serve thousands of customers in dozens of countries, specifically focusing on pulsed RF commercial applications for avionics, radar, medical and industrial applications. We are introducing VIMOS technology to meet the needs and requirements of this unique marketplace. We have supported this industry for over 30 years which has included several governments and Fortune 500 customers. ASI was founded in 1979 and is ISO 9001 certified. Our headquarters is located in North Hollywood, CA, USA.

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