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LLE18150X

NXP Semiconductors

LLE18150X by NXP Semiconductors

LLE18150X by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 25W, operates up to 200 °C, and offers a min power gain of 7.8 dB in the L band. Its flat terminal design allows for easy surface mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 4,501 parts In-Stock

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Vyrian

USA . 3,927 parts In-Stock

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Anansix

USA . 938 parts In-Stock

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One Stop Electronics

USA . 153 parts In-Stock

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$25.050

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Corphita

USA . 3,514 parts In-Stock

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UNI Independent Distributors

Spain . 2,224 parts In-Stock

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Overview

Unlock unparalleled performance with the LLE18150X from NXP Semiconductors, a leader in RF power technology. This robust NPN BJT amplifier embodies superior quality and reliability, designed to excel in demanding applications. With its ceramic-metal sealed package and impressive thermal management, users benefit from enhanced efficiency and longevity. Elevate your projects with this powerhouse that combines advanced engineering and exceptional value, ensuring you're always a step ahead.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This robust packaging ensures durability and reliability, making it suitable for high-performance applications.

Polarity or Channel Type: NPN

The NPN configuration is widely used in amplification and switching applications, providing versatility in design.

Configuration: SINGLE

Single configuration reduces complexity and size, ideal for compact electronic designs.

Transistor Application: AMPLIFIER

Designed specifically for amplification, ensuring high performance in audio and RF signal processing.

Surface Mount: YES

Surface mount technology allows for easier integration into modern circuit boards, enhancing assembly efficiency.

Minimum Power Gain (Gp): 7.8 dB

A minimum power gain of 7.8 dB indicates effective amplification, suitable for various RF applications.

Package Shape: SQUARE

The square shape offers efficient space utilization on printed circuit boards, facilitating compact designs.

Terminal Form: FLAT

Flat terminals provide a solid connection to the PCB, enhancing electrical performance and reliability.

Highest Frequency Band: L BAND

Operating in the L band makes it suitable for various telecommunications and broadcasting applications.

No. of Terminals: 2

With only two terminals, it simplifies the connection and reduces potential failure points.

Package Style (Meter): FLANGE MOUNT

Flange mount style ensures secure installation, providing stability in high-vibration environments.

Maximum Power Dissipation Ambient: 25 W

A high maximum power dissipation rating allows the transistor to handle demanding applications without overheating.

Minimum DC Current Gain (hFE): 15

A minimum hFE of 15 ensures adequate current amplification for various circuits and applications.

Maximum Operating Temperature: 200 °C

The ability to operate at high temperatures makes this transistor suitable for harsh environments.

Maximum Collector-Emitter Voltage: 22 V

A maximum voltage rating of 22 V enables use in various high-voltage applications.

Transistor Element Material: SILICON

Silicon as the element material provides good thermal stability and is widely used for its efficiency and reliability.

Maximum Collector Current (IC): 3 A

Support for a maximum collector current of 3 A makes it suitable for high-power applications.

Terminal Position: DUAL

Dual terminal position facilitates flexible circuit designs and connections.

Case Connection: EMITTER

Emitter connection ensures effective thermal management and stability in operational performance.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) LLE18150X attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

WITH EMITTER BALLASTING RESISTORS

Case Connection:

EMITTER

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

22 V

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

L BAND

JESD-30 Code:

S-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

SQUARE

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

25 W

Minimum Power Gain (Gp):

7.8 dB

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

LLE18150X Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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