Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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LLE18150X by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 25W, operates up to 200 °C, and offers a min power gain of 7.8 dB in the L band. Its flat terminal design allows for easy surface mounting.
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UNI Independent Distributors
This robust packaging ensures durability and reliability, making it suitable for high-performance applications.
The NPN configuration is widely used in amplification and switching applications, providing versatility in design.
Single configuration reduces complexity and size, ideal for compact electronic designs.
Designed specifically for amplification, ensuring high performance in audio and RF signal processing.
Surface mount technology allows for easier integration into modern circuit boards, enhancing assembly efficiency.
A minimum power gain of 7.8 dB indicates effective amplification, suitable for various RF applications.
The square shape offers efficient space utilization on printed circuit boards, facilitating compact designs.
Flat terminals provide a solid connection to the PCB, enhancing electrical performance and reliability.
Operating in the L band makes it suitable for various telecommunications and broadcasting applications.
With only two terminals, it simplifies the connection and reduces potential failure points.
Flange mount style ensures secure installation, providing stability in high-vibration environments.
A high maximum power dissipation rating allows the transistor to handle demanding applications without overheating.
A minimum hFE of 15 ensures adequate current amplification for various circuits and applications.
The ability to operate at high temperatures makes this transistor suitable for harsh environments.
A maximum voltage rating of 22 V enables use in various high-voltage applications.
Silicon as the element material provides good thermal stability and is widely used for its efficiency and reliability.
Support for a maximum collector current of 3 A makes it suitable for high-power applications.
Dual terminal position facilitates flexible circuit designs and connections.
Emitter connection ensures effective thermal management and stability in operational performance.
RF Power Bipolar Junction Transistors (BJT) LLE18150X attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors
Additional Features:
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Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
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Polarity or Channel Type:
Maximum Power Dissipation Ambient:
Minimum Power Gain (Gp):
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Transistor Application:
Transistor Element Material:
LLE18150X Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.75
SB
8541.29.00.80
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
1N4148WT
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
General Diode
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Terminal Finish: Tin/Lead (Sn/Pb); No. of Elements: 1;
0460-202-16141
TE Connectivity
TE Connectivity's 0460-202-16141 contact features a crimp terminal type, machined contact design, and rated AC voltage of 1500V. With a wire gauge range of 20-16 AWG, it is ideal for applications requiring a male round pin-socket contact style in assembly products.
BSS138
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Maximum Drain Current (ID): .2 A; Operating Mode: ENHANCEMENT MODE;
Yangzhou Yangjie Electronics
2N7002
Micro Commercial Components
Small Signal Field-Effect Transistors; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .34 A; Package Style (Meter): SMALL OUTLINE;
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;
1N4148W-7-F
Multicomp Pro
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
STMicroelectronics
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Operating Temperature: 200 Cel; Config: SINGLE; Terminal Finish: Tin/Lead (Sn/Pb);
BAV99W-7-F
Diodes Incorporated
Diodes Incorporated BAV99W-7-F is a fast recovery rectifier diode with 2 elements in series connected, center tap configuration. It has a max reverse recovery time of 0.004 us and can handle a max output current of 0.15 A. Ideal for applications requiring fast switching capabilities and operating temperatures ranging from -65 to 150 °C.
ECA2DHG4R7
Panasonic
ECA2DHG4R7 by Panasonic is a 4.7uF aluminum electrolytic capacitor with 200V rated DC voltage. It features tan delta of 0.15, leakage current of 0.0664mA, and ripple current of 50mA, making it ideal for applications requiring high capacitance stability and low leakage in through-hole mounting setups at temperatures ranging from -25 to 105°C.
SMBJ18CA
First Components International
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Polarity: BIDIRECTIONAL; Maximum Repetitive Peak Reverse Voltage: 18 V;
DS18B20Z+
Maxim Integrated
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Body Width: 3.9 inch; Maximum Supply Voltage: 5.5 V;
C0805C104K5RACTU
KEMET Corporation
KEMET C0805C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring compact size and reliable performance.
BAV99
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Rfe International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
FDD5614P
Onsemi
FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.
KSZ9031RNXIC
Micrel
ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 48; Package Code: HVQCCN; Package Shape: SQUARE;
ULN2803A
YOUTAI SEMICONDUCTOR CO LTD
BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Terminal Form: GULL WING; No. of Terminals: 18; Package Code: SOP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G18;
Taitron Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 60 V; Package Shape: RECTANGULAR;
BLV904TRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; No. of Terminals: 8; JESD-30 Code: R-CDSO-G8;
PTB23003XA
PTB23003XA by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 0.5 A, operates up to 200 °C, and offers a min power gain of 8.75 dB in the C band. Its ceramic, metal-sealed package ensures durability in demanding environments.
934055936114
NPN; Configuration: SINGLE; Surface Mount: YES; Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS; No. of Elements: 1; Case Connection: BASE;
LFE18500XTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Qualification: Not Qualified; Additional Features: WITH EMITTER BALLASTING RESISTORS;
BLU30/28
BLU30/28 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a min power gain of 8 dB, operates at ultra-high frequencies, and supports up to 4 A collector current. Its robust ceramic-metal sealed package ensures reliability in demanding environments.
2N3632
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 400 MHz; Maximum Collector Current (IC): 1 A; Maximum Power Dissipation Ambient: 23 W;
2N5643
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 5 A;
BLY94
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): 6 A; Maximum Collector-Base Capacitance: 130 pF;
2N5642
Motorola
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
RX1214B300YTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Additional Features: WITH EMITTER BALLASTING RESISTORS; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
MX1011B700Y
NPN; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; No. of Terminals: 2; Terminal Form: FLAT;
MRF6409
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Transistor Element Material: SILICON; No. of Terminals: 6;
SD1274-01
STMicroelectronics' SD1274-01 is a NPN RF Power BJT with 70W power dissipation, 175MHz fT, and 16V VCE. Ideal for high-frequency amplifier applications due to its very high frequency band capability. Package: PLASTIC/EPOXY, SINGLE configuration, FLANGE MOUNT style.
BLU10/12
BLU10/12 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 41W, operates at ultra-high frequencies, and offers a min power gain of 8 dB. Ideal for high-performance communication systems.
BLV920
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 3 A; Minimum Power Gain (Gp): 10 dB;
SD1565
SD1565 by STMicroelectronics is an NPN RF BJT transistor with 2 elements, ideal for ultra-high frequency band applications. It has a max power dissipation of 1100W and can handle a collector current of 43.2A. The package is ceramic-metal-sealed co-fired, suitable for flange mount installations at temperatures up to 175 °C.
BLS2731-10
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 1.5 A; Case Connection: BASE;
LTE1015T
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .2 A; No. of Terminals: 2; Terminal Position: RADIAL;
BLV2045N
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 4 A; No. of Terminals: 2; JESD-30 Code: R-CDFM-F2;
BLV32F
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2000 MHz; Maximum Collector Current (IC): 4 A; Transistor Element Material: SILICON;
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LLE15180X
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Maximum Collector Current (IC): 3 A; Maximum Collector-Emitter Voltage: 22 V;
LLE15180XTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; Minimum DC Current Gain (hFE): 15; Minimum Power Gain (Gp): 7.8 dB;
LLE15370X
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; Minimum Power Gain (Gp): 8 dB; Minimum DC Current Gain (hFE): 15;
LLE15370XTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Additional Features: WITH EMITTER BALLASTING RESISTORS;
LLE16045X
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 11 W; Maximum Collector Current (IC): .5 A; Minimum Power Gain (Gp): 8.5 dB;
LLE16045XTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .05 A; Terminal Form: FLAT; Terminal Position: DUAL;
LLE16120X
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 23 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 200 Cel;
LLE16120XTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Terminal Form: FLAT; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
LLE16350X
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; Case Connection: EMITTER; Maximum Operating Temperature: 200 Cel;
LLE16350XTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Minimum Power Gain (Gp): 8 dB; Terminal Form: FLAT;
LLE18010X
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .25 A; Additional Features: DIFFUSED EMITTER BALLAST RESISTOR; Case Connection: EMITTER;
LLE18040X
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Transistor Application: AMPLIFIER; JESD-30 Code: R-CDFM-F2;
LLE18040XL
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-CDFM-F2; Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS;
LLE18040XTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Form: FLAT;
LLE18100X
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 15; Maximum Power Dissipation Ambient: 23 W;
LLE18300X
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 6 A; Package Shape: RECTANGULAR;
LLE18300XTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; Maximum Operating Temperature: 200 Cel; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
Supply Digital Components
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