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MBD110DWT1

Onsemi

MBD110DWT1 by Onsemi

MBD110DWT1 by Onsemi is a microwave mixer & detector diode with 2 elements, suitable for very high to ultra high frequency applications. It features a max forward voltage of 0.6V and can operate at temperatures up to 125 °C. This Schottky diode has a peak power dissipation of 0.12W and is surface mountable in a small outline package shape.

Median Price

$0.188

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

A2Z Electronics, Inc.

USA . 88,302 parts In-Stock

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Bristol Electronics

USA . 88,302 parts In-Stock

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$0.188

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$0.113

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$0.056

88,302

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$0.188

$0.113

$0.056

Cyclops Electronics Ltd

UK . 4,460 parts In-Stock

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4,460

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Digiode

USA . 2,134 parts In-Stock

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Vyrian

USA . 1,778 parts In-Stock

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Classic Components Corporation

USA . 453 parts In-Stock

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453

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SupplyDigital Components

Austria . 7,803 parts In-Stock

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Problanco Electronics

Mexico . 6,006 parts In-Stock

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Corphita

USA . 2,034 parts In-Stock

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Kulean Microsystems

USA . 1,770 parts In-Stock

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UHIMA Technologies

Türkiye . 389 parts In-Stock

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Corohmni

South Africa . 270 parts In-Stock

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TANS Electronics

Latvia . 104 parts In-Stock

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Overview

Discover the power and precision of the MBD110DWT1 by Onsemi, a top-of-the-line Microwave Mixer & Detector Diode that promises unbeatable quality and performance. Manufactured by industry leader Onsemi, this product boasts ultra-high frequency capabilities and a compact, convenient package body material for seamless integration. Ideal for a wide range of applications, this diode offers customers unparalleled value and benefits, making it a must-have for any project requiring top-notch technology. Choose the MBD110DWT1 for reliability, efficiency, and innovation in every use.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable for long-term use.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

This wide frequency band allows for versatile use in various applications requiring signal mixing and detection in very high to ultra-high frequency ranges.

Surface Mount: YES

The surface mount capability makes installation easy and simplifies the overall design of the electronic circuit.

Maximum Diode Capacitance: 1 pF

The low diode capacitance ensures minimal interference with signal processing and maintains high signal integrity.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient placement on circuit boards and maximizes space utilization.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, the product can withstand rigorous usage in various environmental conditions.

Diode Type: MIXER DIODE

The mixer diode type is specifically designed for signal mixing applications, ensuring accurate and reliable signal processing.

Technology: SCHOTTKY

The Schottky technology used in the diodes provides fast switching speeds and low forward voltage, improving overall circuit efficiency.

Technical Specifications

Microwave Mixer & Detector Diodes MBD110DWT1 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SEPARATE, 2 ELEMENTS

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.6 V

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.12 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

7 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MBD110DWT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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