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BAR11-AZ1

STMicroelectronics

BAR11-AZ1 by STMicroelectronics

STMicroelectronics' BAR11-AZ1 is a single-config microwave mixer diode with Schottky technology. Operating from -65 °C to 200°C, it has a max capacitance of 1.2 pF and covers very high to ultra high frequencies. The glass-packaged diode is ideal for applications requiring isolated case connection in round package shapes.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,363 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,363

-

-

-

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Digiode

USA . 1,815 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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1,815

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Anansix

USA . 1,686 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,686

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-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,599 parts In-Stock

1+ parts

$0.109

100+ parts

-

1k+ parts

$0.099

10k+ parts

-

1,599

$0.109

-

$0.099

-

MKK Technologies

India . 2,075 parts In-Stock

1+ parts

$0.206

100+ parts

-

1k+ parts

-

10k+ parts

-

2,075

$0.206

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-

-

DigiPath Technology Company

USA . 2,075 parts In-Stock

1+ parts

$0.206

100+ parts

-

1k+ parts

-

10k+ parts

-

2,075

$0.206

-

-

-

Northwest PG Solutions

USA . 185 parts In-Stock

1+ parts

$2.686

100+ parts

-

1k+ parts

-

10k+ parts

-

185

$2.686

-

-

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Corphita

USA . 3,733 parts In-Stock

1+ parts

-

100+ parts

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3,733

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-

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Parana Technologies

USA . 233 parts In-Stock

1+ parts

-

100+ parts

$0.131

1k+ parts

-

10k+ parts

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233

-

$0.131

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Native Components

USA . 124 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.369

10k+ parts

-

124

-

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$2.369

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Overview

Elevate your RF design with the BAR11-AZ1 by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers superior quality and reliability in their microwave mixer & detector diodes. From very high frequency to ultra high frequency applications, this single configuration diode offers exceptional performance without compromising on efficiency. With a maximum diode capacitance of 1.2 pF and operating temperatures ranging from -65 to 200 °C, the BAR11-AZ1 is designed to meet the demands of your most challenging projects. Upgrade your RF systems today and experience the value and benefits that only STMicroelectronics can provide.

Feature Benefit Bullets

Package Body Material: GLASS

The glass package body material provides durability and reliability, making it suitable for various environments and applications.

Config: SINGLE

The single configuration simplifies the setup and reduces complexity, making it easier to use and integrate into systems.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

This broad frequency band allows for versatile use across a wide range of frequencies, increasing the flexibility and applicability of the product.

Maximum Diode Capacitance: 1.2 pF

The low diode capacitance ensures high frequency response and minimal signal distortion, enhancing the overall performance of the product.

Package Shape: ROUND

The round package shape facilitates easy mounting and installation, enabling seamless integration into various systems and setups.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces the chances of error, improving the overall user experience.

Package Style (Meter): LONG FORM

The long form package style provides a compact and space-efficient design, making it ideal for applications where space is limited.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, this product can withstand elevated temperatures without compromising performance, ensuring reliability in various operating conditions.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature allows for reliable performance even in cold environments, making it suitable for a wide range of operating conditions.

Terminal Position: AXIAL

The axial terminal position simplifies the installation process and ensures proper alignment, reducing the risk of connection issues.

Case Connection: ISOLATED

The isolated case connection helps prevent interference and ensures signal integrity, making it a reliable choice for sensitive applications.

Diode Type: MIXER DIODE

The mixer diode type is designed for mixing and detecting signals, making it suitable for applications that require signal processing and modulation.

Technology: SCHOTTKY

The Schottky technology offers low forward voltage drop and fast switching speeds, enhancing the efficiency and performance of the product.

Terminal Form: WIRE

The wire terminal form provides a secure and reliable connection, ensuring stable performance and durability in various applications.

Diode Element Material: SILICON

The silicon diode element material offers high efficiency and reliability, making it a preferred choice for a wide range of applications.

Technical Specifications

Microwave Mixer & Detector Diodes BAR11-AZ1 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from STMicroelectronics

Specs

Additional Features:

MATCHED BATCH AVAILABLE

Case Connection:

ISOLATED

Config:

SINGLE

Maximum Diode Capacitance:

1.2 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

BAR11-AZ1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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