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BAR10-AZ2

STMicroelectronics

BAR10-AZ2 by STMicroelectronics

STMicroelectronics' BAR10-AZ2 is a single-config microwave mixer diode with Schottky technology. Operating from -65 °C to 200°C, it has a max capacitance of 1.2 pF and covers very high to ultra-high frequencies. Ideal for applications requiring isolated case connection in round package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Anansix

USA . 2,494 parts In-Stock

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2,494

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Digiode

USA . 533 parts In-Stock

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533

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Vyrian

USA . 123 parts In-Stock

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123

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 283 parts In-Stock

1+ parts

$0.014

100+ parts

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$0.012

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283

$0.014

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$0.012

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MKK Technologies

India . 798 parts In-Stock

1+ parts

$0.026

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798

$0.026

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DigiPath Technology Company

USA . 798 parts In-Stock

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$0.026

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798

$0.026

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Native Components

USA . 892 parts In-Stock

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$12.130

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892

$12.130

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Northwest PG Solutions

USA . 107 parts In-Stock

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$13.343

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$12.009

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107

$13.343

$12.009

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Corphita

USA . 1,899 parts In-Stock

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1,899

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Parana Technologies

USA . 1,037 parts In-Stock

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$0.016

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1,037

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$0.016

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Overview

Discover the BAR10-AZ2, a top-tier microwave mixer & detector diode from STMicroelectronics. Renowned for their high-quality components, STMicroelectronics delivers cutting-edge technology in every product. Ideal for very high frequency to ultra-high frequency applications, this mixer diode boasts superior performance and reliability. With a maximum diode capacitance of 1.2 pF and a wide operating temperature range, the BAR10-AZ2 offers unmatched value and benefits to customers seeking precision and efficiency in their designs. Choose STMicroelectronics for excellence in electronics.

Feature Benefit Bullets

Package Body Material: GLASS

Glass packaging provides excellent protection for the diode, ensuring long-term reliability and stability in various operating conditions.

Config: SINGLE

Single configuration simplifies circuit design, making it easier to integrate into existing systems.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Wide frequency band coverage allows for versatile use in different applications requiring signal mixing and detection.

Maximum Diode Capacitance: 1.2 pF

Low diode capacitance enables high-speed signal processing and low insertion loss, contributing to efficient operation.

Package Shape: ROUND

Round shape minimizes signal reflections and interference, ensuring optimal performance in high-frequency applications.

No. of Terminals: 2

Two terminals simplify the connection process and reduce complexity in system integration.

Package Style (Meter): LONG FORM

Long-form package style provides ample space for easy mounting and connection in various circuit layouts.

Maximum Operating Temperature: 200 °C

High maximum operating temperature allows for reliable performance in demanding environments without compromising functionality.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures the diode's functionality in extreme cold conditions, making it suitable for a wide range of applications.

Terminal Position: AXIAL

Axial terminal position facilitates easy alignment and connection in circuits, reducing installation time and effort.

Case Connection: ISOLATED

Isolated case connection enhances signal integrity and minimizes crosstalk, leading to improved performance in sensitive signal processing applications.

Diode Type: MIXER DIODE

Mixer diode type is specifically designed for signal mixing applications, ensuring accurate frequency conversion and signal detection.

Technology: SCHOTTKY

Schottky technology provides low forward voltage drop and fast switching speed, enhancing efficiency and performance in high-frequency circuits.

Terminal Form: WIRE

Wire terminal form offers ease of soldering and connection, making it convenient for assembly and maintenance processes.

Diode Element Material: SILICON

Silicon diode element material ensures high reliability and stability in operation, making it a durable and long-lasting component.

Technical Specifications

Microwave Mixer & Detector Diodes BAR10-AZ2 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Maximum Diode Capacitance:

1.2 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

BAR10-AZ2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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