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BAR19-AZX

STMicroelectronics

BAR19-AZX by STMicroelectronics

BAR19-AZX by STMicroelectronics is a single mixer diode with Schottky technology. It operates in the ultra high frequency band, with a max forward voltage of 0.6V and max output current of 30A. This glass-packaged diode is ideal for applications requiring an isolated case connection and axial terminal position.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,743 parts In-Stock

1+ parts

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4,743

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Vyrian

USA . 2,648 parts In-Stock

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2,648

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Anansix

USA . 796 parts In-Stock

1+ parts

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796

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,059 parts In-Stock

1+ parts

$0.144

100+ parts

-

1k+ parts

$0.129

10k+ parts

-

1,059

$0.144

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$0.129

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MKK Technologies

India . 2,181 parts In-Stock

1+ parts

$0.270

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-

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2,181

$0.270

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DigiPath Technology Company

USA . 2,181 parts In-Stock

1+ parts

$0.270

100+ parts

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2,181

$0.270

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Native Components

USA . 597 parts In-Stock

1+ parts

$0.680

100+ parts

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597

$0.680

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Northwest PG Solutions

USA . 1,376 parts In-Stock

1+ parts

$0.748

100+ parts

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1,376

$0.748

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Corphita

USA . 4,164 parts In-Stock

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4,164

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Parana Technologies

USA . 1,553 parts In-Stock

1+ parts

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100+ parts

$0.172

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1,553

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$0.172

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Overview

Elevate your projects to new heights with the BAR19-AZX from STMicroelectronics. Crafted with precision and expertise, this ultra-high frequency Microwave Mixer & Detector Diode offers unparalleled quality and reliability. Whether you're working on radar systems, communication devices, or RF equipment, this product delivers exceptional performance and efficiency. With a maximum forward voltage of just 0.6V and a minimum breakdown voltage of 4V, the BAR19-AZX ensures optimal functionality and durability. Trust in STMicroelectronics to provide you with the cutting-edge technology you need to succeed.

Feature Benefit Bullets

Package Body Material: GLASS

Glass packaging provides high reliability and excellent electrical isolation, making it suitable for high frequency applications.

Frequency Band: ULTRA HIGH FREQUENCY

Operating in the ultra high frequency band allows for high speed and efficient signal processing, ideal for advanced microwave applications.

Maximum Diode Capacitance: 1 pF

Low diode capacitance ensures minimal signal loss and distortion, making it ideal for high-frequency mixing and detection tasks.

Maximum Reverse Current: 0.25 uA

Low reverse current helps maintain signal integrity and efficiency in high-frequency applications.

Package Shape: ROUND

Round package shape provides uniform electric field distribution and minimal signal reflections, enhancing overall performance.

Diode Type: MIXER DIODE

Specifically designed as a mixer diode, this product is optimized for signal mixing and detection functions in microwave circuits.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low forward voltage drop, ideal for high frequency applications requiring efficient signal processing.

Technical Specifications

Microwave Mixer & Detector Diodes BAR19-AZX attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from STMicroelectronics

Specs

Minimum Breakdown Voltage:

4 V

Case Connection:

ISOLATED

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.6 V

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

30 A

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Reverse Current:

.25 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

BAR19-AZX Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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