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BAR10-AZ1

STMicroelectronics

BAR10-AZ1 by STMicroelectronics

BAR10-AZ1 by STMicroelectronics is a single-config microwave mixer diode with Schottky technology. Operating from -65 °C to 200°C, it has a max capacitance of 1.2 pF and covers very high to ultra-high frequencies. Ideal for applications requiring isolated case connection in round package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,535 parts In-Stock

1+ parts

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2,535

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Anansix

USA . 2,388 parts In-Stock

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2,388

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Vyrian

USA . 186 parts In-Stock

1+ parts

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186

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,663 parts In-Stock

1+ parts

$0.174

100+ parts

-

1k+ parts

$0.156

10k+ parts

-

1,663

$0.174

-

$0.156

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MKK Technologies

India . 2,236 parts In-Stock

1+ parts

$0.327

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-

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2,236

$0.327

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DigiPath Technology Company

USA . 2,236 parts In-Stock

1+ parts

$0.327

100+ parts

-

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2,236

$0.327

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Native Components

USA . 21 parts In-Stock

1+ parts

$10.982

100+ parts

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21

$10.982

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Northwest PG Solutions

USA . 1,810 parts In-Stock

1+ parts

$12.081

100+ parts

$10.872

1k+ parts

-

10k+ parts

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1,810

$12.081

$10.872

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-

Parana Technologies

USA . 2,226 parts In-Stock

1+ parts

-

100+ parts

$0.208

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2,226

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$0.208

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Corphita

USA . 417 parts In-Stock

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417

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Overview

Unlock the potential of your RF applications with the BAR10-AZ1 by STMicroelectronics. Manufactured with top-notch quality and precision, this microwave mixer and detector diode offers unparalleled performance in the very high frequency to ultra high-frequency bands. With a single configuration and a maximum diode capacitance of 1.2 pF, this product is designed to meet the demands of modern technology. Whether you are working on communications systems, radar, or satellite equipment, the BAR10-AZ1 provides exceptional value, reliability, and efficiency for all your electronic projects. Elevate your work to the next level with STMicroelectronics' cutting-edge technology.

Feature Benefit Bullets

Package Body Material: GLASS

Glass is a high-quality material that offers excellent durability and protection for the diode, ensuring a longer lifespan for the product.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

This wide frequency band allows for versatile use of the diode in various applications, making it a flexible and adaptable choice.

Maximum Diode Capacitance: 1.2 pF

Low diode capacitance ensures minimal signal loss and distortion, making this diode ideal for high-frequency applications where signal integrity is crucial.

Package Shape: ROUND

Round package shape provides efficient thermal dissipation and compact design for easy integration into circuitry.

No. of Terminals: 2

Having only two terminals simplifies the installation process and reduces the risk of wiring errors, making it user-friendly.

Maximum Operating Temperature: 200 °C

High maximum operating temperature allows for reliable performance even in demanding conditions, ensuring consistent operation.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures the diode can withstand cold environments without sacrificing performance, increasing its reliability.

Diode Type: MIXER DIODE

Specifically designed as a mixer diode, this product is optimized for signal mixing applications, ensuring accurate and efficient signal processing.

Technology: SCHOTTKY

Schottky diode technology offers fast switching speeds and low forward voltage drop, making it ideal for high-frequency applications that require precision and efficiency.

Diode Element Material: SILICON

Silicon diodes are known for their high conductivity and reliability, ensuring consistent performance over time and making this product a durable choice.

Technical Specifications

Microwave Mixer & Detector Diodes BAR10-AZ1 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Maximum Diode Capacitance:

1.2 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

BAR10-AZ1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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