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BAR19

STMicroelectronics

BAR19 by STMicroelectronics

BAR19 by STMicroelectronics is a Schottky mixer diode designed for ultra-high frequency applications. It features a max reverse current of 0.25 µA, operates b/w -65 °C to 125°C, and has a max diode capacitance of 1 pF. Ideal for microwave mixing and detection tasks.

Median Price

$68.745

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ozdisan Elektronik

Türkiye . 1,747 parts In-Stock

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$68.745

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$68.745

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Anansix

USA . 2,283 parts In-Stock

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Digiode

USA . 1,683 parts In-Stock

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1,683

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Vyrian

USA . 344 parts In-Stock

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344

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Fibra_Brandt Electronic GMBH

Germany . 70 parts In-Stock

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LittleDiode

UK . 18 parts In-Stock

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IDEA Electronic Components Group

UK . 1,192 parts In-Stock

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$0.056

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$0.051

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$0.056

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$0.051

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MKK Technologies

India . 484 parts In-Stock

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$0.106

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484

$0.106

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DigiPath Technology Company

USA . 484 parts In-Stock

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$0.106

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Native Components

USA . 601 parts In-Stock

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$0.430

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$0.413

601

$0.430

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$0.413

Northwest PG Solutions

USA . 1,195 parts In-Stock

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$0.473

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$0.417

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$0.473

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$0.417

Perfect Parts

USA . 4,089 parts In-Stock

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GreenTree Electronics

Israel . 1,787 parts In-Stock

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Corphita

USA . 1,774 parts In-Stock

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Parana Technologies

USA . 1,060 parts In-Stock

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$0.067

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$0.067

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Overview

Experience unparalleled performance with the BAR19 by STMicroelectronics, a premier microwave mixer and detector diode designed for ultra-high frequency applications. Crafted from high-quality materials, this reliable diode ensures exceptional signal integrity while minimizing power loss. With its compact design and robust thermal capabilities, the BAR19 is perfect for telecommunications, radar systems, and RF applications, delivering unmatched efficiency and longevity that empower your innovations. Transform your projects with the trusted quality of STMicroelectronics!

Feature Benefit Bullets

Package Body Material: GLASS

Glass packaging ensures durability and heat resistance, making the diode suitable for high-performance applications.

Configuration: SINGLE

A single configuration simplifies the design and integration into various circuits, reducing complexity.

Frequency Band: ULTRA HIGH FREQUENCY

The ability to operate in the ultra-high frequency band makes this diode ideal for advanced communication and radar applications.

Maximum Diode Capacitance: 1 pF

Low capacitance ensures fast response times, making this diode suitable for high-speed applications.

Maximum Reverse Current: 0.25 uA

Minimal reverse current improves efficiency and reliability in applications where power conservation is crucial.

Package Shape: ROUND

The round shape facilitates easy mounting and integration into various circuit designs.

Number of Terminals: 2

Having two terminals simplifies connectivity in circuit designs, making the diode user-friendly.

Package Style (Meter): LONG FORM

The long form package style aids in heat dissipation, enhancing overall performance in high power applications.

Maximum Operating Temperature: 125 °C

Can operate at higher temperatures, making this diode suitable for harsh environments.

Minimum Operating Temperature: -65 °C

Ability to function in extreme cold makes this diode versatile in various operating conditions.

Terminal Position: AXIAL

Axial terminals allow for convenient mounting and integration into circuit boards.

Case Connection: ISOLATED

Isolated case connection improves safety and reduces the risk of short circuits.

Minimum Breakdown Voltage: 4 V

The breakdown voltage provides a margin for safe operation in various applications.

Diode Type: MIXER DIODE

Designed specifically as a mixer diode, perfect for RF signal processing applications.

Maximum Forward Voltage (VF): 0.6 V

Low forward voltage drop enhances efficiency, making this diode ideal for low power applications.

Maximum Output Current: 30 A

High output current capacity supports a wide range of demanding circuit applications.

Technology: SCHOTTKY

Schottky technology provides fast switching capabilities and low forward voltages, enhancing performance.

Terminal Form: WIRE

Wire terminals provide flexible connecting options, fostering ease of integration into various setups.

Maximum Repetitive Peak Reverse Voltage: 4 V

This rating ensures reliability under repetitive voltage spikes, safeguarding circuit integrity.

Maximum Non-Repetitive Peak Forward Current: 0.08 A

This capability allows for occasional high surge current without damage, making it resilient in varied conditions.

Diode Element Material: SILICON

Silicon ensures excellent electrical properties, reliability, and performance, particularly in RF applications.

Technical Specifications

Microwave Mixer & Detector Diodes BAR19 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from STMicroelectronics

Specs

Minimum Breakdown Voltage:

4 V

Case Connection:

ISOLATED

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.6 V

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

Maximum Non Repetitive Peak Forward Current:

.08 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

30 A

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

4 V

Maximum Reverse Current:

.25 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

BAR19 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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