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ESGD100

Onsemi

ESGD100 by Onsemi

The Onsemi ESGD100 is a Schottky mixer diode with 0.32 pF capacitance, operating up to 150 °C. It is a single-config chip carrier package for microwave applications. This surface-mount diode has a rectangular shape and no lead terminals, making it ideal for high-frequency circuit designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 967 parts In-Stock

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Digiode

USA . 65 parts In-Stock

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Native Components

USA . 166 parts In-Stock

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$1.089

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Northwest PG Solutions

USA . 1,271 parts In-Stock

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$1.198

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SupplyDigital Components

Austria . 8,331 parts In-Stock

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Problanco Electronics

Mexico . 8,126 parts In-Stock

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TANS Electronics

Latvia . 4,343 parts In-Stock

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Kulean Microsystems

USA . 2,082 parts In-Stock

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Corphita

USA . 1,397 parts In-Stock

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UHIMA Technologies

Türkiye . 739 parts In-Stock

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Corohmni

South Africa . 73 parts In-Stock

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Overview

Discover the unparalleled quality and reliability of the ESGD100 by Onsemi, a leading manufacturer in the industry. This versatile microwave mixer & detector diode is perfect for a wide range of applications. With its single configuration and surface mount capability, it provides exceptional value to customers seeking high-performance solutions. Experience the benefits of this advanced technology, from its low diode capacitance to its superior Schottky design. Trust Onsemi to deliver cutting-edge products that exceed your expectations.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes it easy to design and integrate into systems without the need for additional components.

Surface Mount: YES

Surface mount capability allows for easy installation on circuit boards, saving space and enabling mass production.

Maximum Diode Capacitance: 0.32 pF

Low diode capacitance ensures high frequency performance and minimal signal loss.

Package Shape: RECTANGULAR

Rectangular package shape provides stability during installation and fits well within circuit board layouts.

No. of Terminals: 2

Having two terminals simplifies connectivity and reduces the chances of errors during installation.

Package Style (Meter): CHIP CARRIER

Chip carrier package style offers protection and easy handling during installation.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliability in various operating conditions.

Terminal Position: BOTTOM

Bottom terminal position makes it easier to solder and provides a secure connection.

Diode Type: MIXER DIODE

Mixer diode type is suitable for frequency mixing applications in microwave systems.

Technology: SCHOTTKY

Schottky technology offers low forward voltage drop and fast switching speed, ideal for high-frequency applications.

Terminal Form: NO LEAD

No-lead terminal form simplifies soldering and improves thermal performance.

Diode Element Material: SILICON

Silicon diode element material provides good electrical performance and reliability.

Technical Specifications

Microwave Mixer & Detector Diodes ESGD100 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SINGLE

Maximum Diode Capacitance:

.32 pF

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-XBCC-N2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

CHIP CARRIER

Qualification:

Not Qualified

Sub-Category:

Microwave Mixer Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

ESGD100 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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