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MMBD355LT3

Onsemi

MMBD355LT3 by Onsemi

MMBD355LT3 by Onsemi is a microwave mixer & detector diode with common anode config, 2 elements, and ultra high frequency band. It features a max diode capacitance of 1 pF, small outline package style, and tin lead terminal finish. Ideal for applications requiring high frequency signal detection in compact electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,920 parts In-Stock

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Digiode

USA . 1,235 parts In-Stock

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1,235

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Problanco Electronics

Mexico . 5,159 parts In-Stock

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TANS Electronics

Latvia . 5,068 parts In-Stock

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Corphita

USA . 1,047 parts In-Stock

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Kulean Microsystems

USA . 682 parts In-Stock

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682

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UHIMA Technologies

Türkiye . 630 parts In-Stock

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Corohmni

South Africa . 404 parts In-Stock

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404

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SupplyDigital Components

Austria . 300 parts In-Stock

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Overview

Enhance your electronic projects with the top-quality MMBD355LT3 by Onsemi, a leading manufacturer in the industry. This ultra-high frequency mixer diode offers exceptional performance and reliability for a wide range of applications. Whether you're working on telecommunications, radar systems, or satellite communication, this common anode diode with two elements will deliver superior results. With its small outline package and gull wing terminals, installation is a breeze. Trust Onsemi to provide cutting-edge technology that will elevate your projects to the next level. Experience the difference with the MMBD355LT3 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diodes, making the product long-lasting and reliable.

Config: COMMON ANODE, 2 ELEMENTS

The common anode configuration with 2 elements allows for efficient mixing and detection of signals, ensuring accuracy in microwave applications.

Frequency Band: ULTRA HIGH FREQUENCY

The ultra high frequency band capability enables this product to work effectively in high-speed data transmission and communication systems.

Surface Mount: YES

The surface mount feature makes installation and integration of the diodes easier, saving time and effort during assembly.

Maximum Diode Capacitance: 1 pF

The low diode capacitance allows for high-speed signal processing and low signal loss, maintaining signal integrity in microwave applications.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact and space-saving design, ideal for applications where size constraints are a concern.

No. of Terminals: 3

Having 3 terminals allows for easy connectivity and integration into circuitry, facilitating a smooth electrical connection.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, enabling efficient use of board real estate in compact electronic devices.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability and conductivity, ensuring secure connections for reliable performance.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit design and layout, allowing for various connection configurations to meet specific application requirements.

Maximum Power Dissipation: 0.225 W

With a high maximum power dissipation rating, this product can handle significant power levels without compromising performance or reliability.

Diode Type: MIXER DIODE

Being a mixer diode, this product is specifically designed for mixing and detecting microwave signals, ensuring high precision and accuracy in signal processing.

Terminal Form: GULL WING

The gull wing terminal form provides mechanical strength and stability during installation, enhancing the overall durability and longevity of the product.

No. of Elements: 2

Having 2 diode elements allows for efficient signal mixing and detection, enabling accurate amplification and modulation of microwave signals.

Diode Element Material: SILICON

Silicon diode elements offer low noise, high sensitivity, and fast response times, making them ideal for high-frequency microwave applications.

Technical Specifications

Microwave Mixer & Detector Diodes MMBD355LT3 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

COMMON ANODE, 2 ELEMENTS

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MMBD355LT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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