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MMBD352LT1G

Onsemi

MMBD352LT1G by Onsemi

MMBD352LT1G by Onsemi is a series connected, ultra high frequency microwave mixer diode with 2 elements. It has a max diode capacitance of 1 pF and operates in temperatures ranging from -55 to 150 °C. This small outline diode is ideal for applications requiring high frequency mixing and detection.

Median Price

$0.042

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DigiKey

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Newark

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Arrow

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Verical

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Master Electronics

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Chip1Stop

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Future Electronics

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Farnell

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Element14

Singapore . 22 parts In-Stock

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Flip Electronics

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Vyrian

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Bristol Electronics

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$0.044

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$0.033

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Digiode

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Component Electronics Inc.

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$0.330

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Chip Stock

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IBS Electronics

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NAC Semi

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Dan-Mar Components

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North Shore Components

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ACDS - Activité Composants Distribution Service

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PC Components Company LLC

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Quantum Digital Technology

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Cyclops Electronics Ltd

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Prism Electronics

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Aztec Data Supply Inc.

USA . 800 parts In-Stock

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Corohmni

South Africa . 470 parts In-Stock

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Component Stockers USA

USA . 84,203 parts In-Stock

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Corphita

USA . 727 parts In-Stock

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Metaverse IC Inc.

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Perfect Parts

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RC Electronics

USA . 25,200 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Kulean Microsystems

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iodParts Technologies Inc.

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SupplyDigital Components

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A-Z Elektronik GmbH

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Continental Prestige Electronics

USA . 793 parts In-Stock

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Authorized Procurement Solutions

USA . 330 parts In-Stock

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GreenTree Electronics

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Kepictronics

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Overview

Discover the MMBD352LT1G by Onsemi, a high-quality microwave mixer and detector diode designed to deliver unparalleled performance in ultra-high frequency applications. With a series connected, center tap configuration and two elements, this diode offers exceptional reliability and precision. Ideal for a wide range of applications, this diode provides customers with unmatched value and benefits. Trust in Onsemi's reputation for excellence and choose the MMBD352LT1G for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the components inside, increasing the overall longevity of the product.

Config: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Series connected configuration with a center tap and 2 elements allows for efficient signal mixing and detection, enhancing the performance of the device.

Frequency Band: ULTRA HIGH FREQUENCY

Designed for ultra high frequency operation, ensuring high-speed signal processing and accuracy in microwave applications.

Surface Mount: YES

Surface mount capability makes installation and integration of the device easy and convenient in various electronic systems.

Maximum Diode Capacitance: 1 pF

Low diode capacitance ensures minimal signal loss and distortion, leading to accurate mixing and detection of microwave signals.

Package Shape: RECTANGULAR

Rectangular package shape allows for efficient use of PCB space and facilitates easy mounting and placement within electronic circuits.

No. of Terminals: 3

Having 3 terminals enables proper connectivity and signal transmission between components, ensuring reliable performance of the device.

Package Style (Meter): SMALL OUTLINE

Small outline package style offers compactness and space-saving design, ideal for applications where size constraints are a consideration.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in demanding conditions without the risk of overheating or component failure.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature ensures functionality even in harsh environments or extreme cold temperatures.

Terminal Finish: MATTE TIN

Matte tin finish on terminals provides good conductivity and corrosion resistance, enhancing the overall reliability and lifespan of the product.

Terminal Position: DUAL

Dual terminal position offers flexibility in installation and allows for easy connection to external circuits, improving the usability of the device.

Maximum Power Dissipation: 0.225 W

With a maximum power dissipation of 0.225W, the device can handle high power levels without risking damage or performance degradation.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for quick and efficient soldering during assembly, saving time and ensuring proper connections for reliable operation.

Peak Reflow Temperature °C: 260

Capable of withstanding peak reflow temperatures of 260°C, ensuring secure and durable solder joints during assembly.

Diode Type: MIXER DIODE

Specifically designed as a mixer diode for microwave applications, offering high performance and precision in signal mixing and detection tasks.

Terminal Form: GULL WING

Gull wing terminal form provides easy mounting and soldering on the PCB, ensuring secure connections and reliable performance.

No. of Elements: 2

Having 2 elements enhances the device's signal processing capabilities, allowing for efficient mixing and detection of microwave signals.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency, durability, and stability, ensuring consistent performance over an extended period.

Technical Specifications

Microwave Mixer & Detector Diodes MMBD352LT1G attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Sub-Category:

Microwave Mixer Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBD352LT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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