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MMBD352

Onsemi

MMBD352 by Onsemi

The Onsemi MMBD352 is a Schottky mixer diode with 1 pF capacitance, suitable for ultra high frequency applications. This small outline diode has a plastic/epoxy body and gull wing terminals, making it ideal for surface mount designs. With dual terminal position and silicon element material, it offers reliable performance in microwave circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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< 1k

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Digiode

USA . 431 parts In-Stock

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Vyrian

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SupplyDigital Components

Austria . 7,975 parts In-Stock

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TANS Electronics

Latvia . 6,578 parts In-Stock

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Problanco Electronics

Mexico . 4,672 parts In-Stock

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Kulean Microsystems

USA . 1,518 parts In-Stock

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Corphita

USA . 687 parts In-Stock

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Corohmni

South Africa . 218 parts In-Stock

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Perfect Parts

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UHIMA Technologies

Türkiye . 28 parts In-Stock

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Overview

Elevate your electronic projects with the MMBD352 by Onsemi, a top-quality Microwave Mixer & Detector Diode that offers unparalleled performance and reliability. Manufactured by the trusted brand Onsemi, this diode is designed for ultra-high frequency applications and features a small outline package style for easy integration. With a maximum diode capacitance of 1pF and advanced Schottky technology, this diode delivers exceptional precision and efficiency. Whether you're working on radar systems, communication devices, or microwave circuits, the MMBD352 provides unmatched value and benefits to help you achieve outstanding results. Experience the difference with Onsemi's MMBD352 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the diodes inside, ensuring long-lasting performance.

Frequency Band: ULTRA HIGH FREQUENCY

Works efficiently in the ultra high frequency range, making it suitable for high-speed data transmission and communication applications.

Surface Mount: YES

Ease of installation and space-saving design due to surface mount capability.

Maximum Diode Capacitance: 1 pF

Low capacitance ensures minimal signal loss and high efficiency in signal processing.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into various circuit designs and layouts.

No. of Terminals: 3

Three terminals provide flexibility in circuit connections and enable versatile applications.

Package Style (Meter): SMALL OUTLINE

Compact small outline package style saves space on circuit boards and in electronic devices.

Terminal Position: DUAL

Dual terminal position allows for efficient signal transmission and reliable connections.

Diode Type: MIXER DIODE

Specifically designed as a mixer diode for frequency mixing applications, ensuring superior performance in signal processing.

Technology: SCHOTTKY

Schottky technology offers low forward voltage drop and fast switching speeds, enhancing the overall efficiency of the diodes.

Terminal Form: GULL WING

Gull-wing terminal form facilitates easy soldering and mounting onto circuit boards.

No. of Elements: 2

Two elements provide dual functionality or redundancy, enhancing the reliability of the diodes.

Diode Element Material: SILICON

Silicon material ensures high sensitivity and stability in signal detection and processing.

Technical Specifications

Microwave Mixer & Detector Diodes MMBD352 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AA

JESD-30 Code:

R-PDSO-G3

No. of Elements:

2

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

MMBD352 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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