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MMBD301M3T5G

Onsemi

MMBD301M3T5G by Onsemi

MMBD301M3T5G by Onsemi is a Schottky mixer diode with 30V reverse voltage, 1.5pF capacitance, and 0.45V forward voltage. It operates in the ultra-high frequency band, suitable for microwave applications. This single-configured diode is surface-mountable and has a max power dissipation of 0.2W.

Median Price

$0.079

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 5,892 parts In-Stock

1+ parts

$0.110

100+ parts

$0.053

1k+ parts

$0.043

10k+ parts

$0.040

5,892

$0.110

$0.053

$0.043

$0.040

Adafruit Industries

USA . 200 parts In-Stock

1+ parts

$0.131

100+ parts

$0.119

1k+ parts

$0.107

10k+ parts

-

200

$0.131

$0.119

$0.107

-

Mouser Electronics

USA . 5,556 parts In-Stock

1+ parts

$0.340

100+ parts

$0.097

1k+ parts

$0.066

10k+ parts

$0.043

5,556

$0.340

$0.097

$0.066

$0.043

Rochester

USA . 7,184,000 parts In-Stock

1+ parts

-

100+ parts

$0.048

1k+ parts

$0.040

10k+ parts

$0.035

7,184,000

-

$0.048

$0.040

$0.035

Verical

USA . 5,656,000 parts In-Stock

1+ parts

-

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-

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$0.044

5,656,000

-

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$0.044

Flip Electronics (Authorized)

USA . 2,232,000 parts In-Stock

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2,232,000

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Chip1Stop

Japan . 13,352 parts In-Stock

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$0.032

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13,352

-

$0.032

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Distributors (In-Stock)

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Digiode

USA . 830 parts In-Stock

1+ parts

$0.033

100+ parts

-

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830

$0.033

-

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Nova Conductors

Japan . 550 parts In-Stock

1+ parts

$0.054

100+ parts

-

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550

$0.054

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Flip Electronics

USA . 2,232,000 parts In-Stock

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Vyrian

USA . 2,156,345 parts In-Stock

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Chip Stock

USA . 56,000 parts In-Stock

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56,000

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Distributors (Availability)

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Ampacity Inc.

Singapore . 2,156,666 parts In-Stock

1+ parts

$0.030

100+ parts

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2,156,666

$0.030

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Semicontronic

India . 2,156,588 parts In-Stock

1+ parts

$0.030

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$0.029

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$0.029

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2,156,588

$0.030

$0.029

$0.029

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Corphita

USA . 2,103 parts In-Stock

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$0.032

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2,103

$0.032

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Corohmni

South Africa . 270 parts In-Stock

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$0.035

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270

$0.035

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Argo Parts USA

USA . 4,838 parts In-Stock

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$0.054

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$0.052

4,838

$0.054

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$0.052

Continental Prestige Electronics

USA . 1,669 parts In-Stock

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$0.054

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$0.053

1,669

$0.054

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-

$0.053

Netroflash

USA . 100 parts In-Stock

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$0.054

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$0.053

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100

$0.054

$0.053

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Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$0.131

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$0.119

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$0.107

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200

$0.131

$0.119

$0.107

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Aztec Data Supply Inc.

USA . 1,364 parts In-Stock

1+ parts

$0.187

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1,364

$0.187

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TANS Electronics

Latvia . 8,310 parts In-Stock

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Problanco Electronics

Mexico . 7,425 parts In-Stock

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Perfect Parts

USA . 6,068 parts In-Stock

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SupplyDigital Components

Austria . 2,661 parts In-Stock

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Robosynatics

Brazil . 900 parts In-Stock

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$0.518

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$0.518

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$0.518

900

-

$0.518

$0.518

$0.518

Lucentia Tech

USA . 900 parts In-Stock

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$0.518

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$0.518

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$0.518

900

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$0.518

$0.518

$0.518

UHIMA Technologies

Türkiye . 184 parts In-Stock

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Kulean Microsystems

USA . 154 parts In-Stock

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154

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Overview

Unleash the power of innovation with the MMBD301M3T5G by Onsemi. Designed for ultra-high frequency applications, this microwave mixer & detector diode offers unmatched performance and reliability. With a durable plastic/epoxy package body material and small outline package style, this diode is perfect for a wide range of electronic projects. Experience crystal-clear signals and seamless integration with its single configuration and matte tin terminal finish. Elevate your designs with the MMBD301M3T5G and unlock endless possibilities in the world of electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a longer lifespan for the product.

Frequency Band: ULTRA HIGH FREQUENCY

Allows for high-frequency signal mixing and detection, making it suitable for advanced communication systems.

Maximum Diode Capacitance: 1.5 pF

Low diode capacitance ensures minimal signal loss and interference during mixing and detection processes.

Maximum Power Dissipation: 0.2 W

Efficient power dissipation capability ensures stable operation even under high power conditions.

Technology: SCHOTTKY

Schottky diode technology offers high switching speeds and low forward voltage drop, ideal for high-frequency applications.

Technical Specifications

Microwave Mixer & Detector Diodes MMBD301M3T5G attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SINGLE

Maximum Diode Capacitance:

1.5 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.45 V

Frequency Band:

ULTRA HIGH FREQUENCY

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBD301M3T5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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