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MMBD101L

Onsemi

MMBD101L by Onsemi

MMBD101L by Onsemi is a single Schottky mixer diode with ultra high frequency range. It has a max forward voltage of 0.6V and operates at temperatures up to 150 °C. Ideal for microwave applications, this diode features a small outline package with gull wing terminals for surface mount assembly.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

< 1k

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Vyrian

USA . 466 parts In-Stock

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Digiode

USA . 165 parts In-Stock

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EPE Components Inc.

USA . 14 parts In-Stock

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Bristol Electronics

USA . 14 parts In-Stock

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Kulean Microsystems

USA . 4,962 parts In-Stock

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Problanco Electronics

Mexico . 4,535 parts In-Stock

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SupplyDigital Components

Austria . 3,573 parts In-Stock

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TANS Electronics

Latvia . 1,856 parts In-Stock

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Corphita

USA . 1,505 parts In-Stock

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UHIMA Technologies

Türkiye . 307 parts In-Stock

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Corohmni

South Africa . 243 parts In-Stock

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Overview

Unleash the power of ultra-high frequency technology with the MMBD101L by Onsemi, a top-tier manufacturer known for its quality and reliability. These microwave mixer & detector diodes are designed to deliver superior performance in various applications, offering unmatched value and benefits to customers. With a small outline package style and gull wing terminal form, these diodes provide precision and efficiency without compromising on durability. Experience the difference with Onsemi's MMBD101L and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for various applications.

Frequency Band: ULTRA HIGH FREQUENCY

The ultra high frequency band ensures high-performance signal processing capabilities for advanced applications.

Surface Mount: YES

Being surface mountable makes the product easier to install and saves space on the PCB.

Maximum Diode Capacitance: 1 pF

Low diode capacitance ensures minimal signal distortion and high frequency response, making it ideal for sensitive applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for dense circuit designs.

Maximum Power Dissipation: 0.225 W

With a high maximum power dissipation, the product can handle high-power signals without overheating.

Diode Type: MIXER DIODE

The mixer diode type is specifically designed for signal mixing applications, ensuring accurate and efficient signal processing.

Technology: SCHOTTKY

The Schottky technology offers low forward voltage and fast switching speed, ideal for high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 7 V

The high repetitive peak reverse voltage rating ensures reliable performance and protection against reverse voltage spikes.

Technical Specifications

Microwave Mixer & Detector Diodes MMBD101L attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.6 V

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

7 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MMBD101L Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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