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MBD701

Onsemi

MBD701 by Onsemi

The Onsemi MBD701 is a single Schottky mixer diode with 1 pF capacitance, suitable for ultra high frequency applications. It has a max power dissipation of 0.28 W and operates at temperatures up to 125 °C. This cylindrical diode in plastic/epoxy package is ideal for microwave mixing and detection circuits.

Median Price

$7.000

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

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American Microsemiconductor Inc.

USA . 41 parts In-Stock

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$7.000

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Bristol Electronics

USA . 1,424 parts In-Stock

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Atlantic Semiconductor

USA . 1,424 parts In-Stock

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Digiode

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Vyrian

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Manotoh

Italy . 503 parts In-Stock

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ECAB

Sweden . 67 parts In-Stock

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Prism Electronics

USA . 38 parts In-Stock

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J & M Industries LLC

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ACDS - Activité Composants Distribution Service

France . 35 parts In-Stock

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Sogenti Electronics

Canada . 16 parts In-Stock

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MISTER SPROCKETS

USA . 6 parts In-Stock

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EMSNET

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Electronics Depot

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Andel Nordic

Denmark . 60 parts In-Stock

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$3.254

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$3.124

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$3.124

60

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Corohmni

South Africa . 472 parts In-Stock

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$7.000

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Component Stockers USA

USA . 739 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 19,000 parts In-Stock

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Problanco Electronics

Mexico . 8,075 parts In-Stock

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Kulean Microsystems

USA . 7,784 parts In-Stock

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TANS Electronics

Latvia . 5,610 parts In-Stock

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Standard Data Resources (Excess)

USA . 2,038 parts In-Stock

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SupplyDigital Components

Austria . 2,014 parts In-Stock

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Corphita

USA . 568 parts In-Stock

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UHIMA Technologies

Türkiye . 526 parts In-Stock

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Perfect Parts

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Overview

Unleash the power of cutting-edge technology with the MBD701 by Onsemi. As a leading manufacturer in the industry of Microwave Mixer & Detector Diodes, Onsemi sets a high standard for quality and innovation. The MBD701, designed for ultra-high frequency applications, offers unmatched performance and reliability. With a single configuration and a compact cylindrical package, this diode provides customers with a cost-effective solution for their electronic needs. Experience the benefits of superior design and precision engineering with the MBD701, your ultimate choice for advanced electronic components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, making it easy to handle and resistant to damage.

Frequency Band: ULTRA HIGH FREQUENCY

Operating in the ultra high frequency band allows for high-speed and high-performance communication and signal processing capabilities.

Maximum Diode Capacitance: 1 pF

With a low diode capacitance of 1 pF, this product allows for efficient and fast signal processing, reducing signal distortion and loss.

Package Shape: ROUND

The round package shape simplifies the design and integration of the product into various electronic systems, ensuring compatibility and ease of installation.

No. of Terminals: 2

With 2 terminals, this product offers a simple and straightforward connection setup, reducing complexity in the installation process.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides a reliable and durable connection, ensuring consistent performance and signal integrity over time.

Maximum Power Dissipation: 0.28 W

With a maximum power dissipation of 0.28 W, this product can handle high power levels without overheating, ensuring stable operation under demanding conditions.

Diode Type: MIXER DIODE

The mixer diode type allows for efficient mixing and detection of microwave signals, enabling precise signal processing and analysis in various applications.

Technology: SCHOTTKY

Utilizing Schottky technology, this product offers fast switching speed and low forward voltage drop, enhancing performance and efficiency in signal processing applications.

Diode Element Material: SILICON

The silicon diode element material provides stability and reliability in signal processing, ensuring consistent performance and signal quality over time.

Technical Specifications

Microwave Mixer & Detector Diodes MBD701 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Sub-Category:

Other Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MBD701 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

NSN

5961-14-349-5028, 5961143495028, 5961-01-143-2539, 5961011432539

NIIN

143495028, 011432539

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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