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TGD0623SSMX

Texas Instruments

TGD0623SSMX by Texas Instruments

TGD0623SSMX by Texas Instruments is a single Schottky mixer diode with Gallium Arsenide element. It operates in the very high frequency to millimeter wave band, suitable for microwave applications. This surface-mount diode has a ceramic, metal-sealed co-fired package and wrap-around terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,399 parts In-Stock

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3,399

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Digiode

USA . 1,265 parts In-Stock

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1,265

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Distributors (Availability)

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Semicontronic

India . 328 parts In-Stock

1+ parts

$0.010

100+ parts

$0.010

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$0.010

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-

328

$0.010

$0.010

$0.010

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Parana Technologies

USA . 803 parts In-Stock

1+ parts

$0.136

100+ parts

-

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$1.483

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803

$0.136

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$1.483

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DigiPath Technology Company

USA . 1,513 parts In-Stock

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$0.150

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1,513

$0.150

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IDEA Electronic Components Group

UK . 1,154 parts In-Stock

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$0.153

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$0.138

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1,154

$0.153

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$0.138

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ChromeModa Solutions

Germany . 738 parts In-Stock

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$0.153

100+ parts

$0.125

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738

$0.153

$0.125

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One Stop Electronics

USA . 224 parts In-Stock

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$1.010

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224

$1.010

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Ampacity Inc.

Singapore . 292 parts In-Stock

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$2.010

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292

$2.010

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AZTECH Wire

Italy . 197 parts In-Stock

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$14.795

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197

$14.795

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Corphita

USA . 942 parts In-Stock

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942

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Corohmni

South Africa . 395 parts In-Stock

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Overview

Elevate your microwave design with the TGD0623SSMX by Texas Instruments. Crafted with precision and expertise, this mixer diode offers top-tier performance in very high frequency to millimeter wave bands. Its ceramic, metal-sealed cofired package ensures durability and reliability. Perfect for a range of applications, from telecommunications to radar systems, this diode delivers unmatched quality and efficiency. Trust Texas Instruments to provide cutting-edge technology that exceeds expectations. Experience the difference with the TGD0623SSMX.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material provides durability and reliability, making it suitable for high frequency applications.

Config: SINGLE

The single configuration simplifies the design and integration process, reducing complexity and potential points of failure.

Frequency Band: VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND

Capable of operating in very high frequency ranges up to millimeter wave bands, making it suitable for a wide range of applications.

Surface Mount: YES

The surface mount capability allows for easy and convenient installation on PCBs, saving space and simplifying assembly.

Package Shape: ROUND

The round package shape provides uniformity and ease of handling during assembly and integration processes.

No. of Terminals: 2

With only 2 terminals, the device is simple to connect and reduces the chance of wiring errors.

Package Style (Meter): LONG FORM

The long form package style provides stability and support for high frequency operation.

Terminal Position: END

The end terminal position allows for easy and direct connection to other components in the circuit.

Case Connection: ISOLATED

The isolated case connection helps prevent interference and ensures accurate signal processing.

Diode Type: MIXER DIODE

The mixer diode type allows for signal mixing and frequency conversion, essential in microwave applications.

Technology: SCHOTTKY

Utilizing Schottky technology for the diode enables fast switching speeds and low forward voltage drop, improving overall performance.

Terminal Form: WRAP AROUND

The wrap around terminal form provides secure and reliable connections, reducing the risk of signal loss or interruption.

Diode Element Material: GALLIUM ARSENIDE

Gallium arsenide diode element material offers high electron mobility and fast response times, ideal for high frequency applications.

Technical Specifications

Microwave Mixer & Detector Diodes TGD0623SSMX attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

GALLIUM ARSENIDE

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND

JESD-30 Code:

O-CELF-R2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

END

Trade Compliance

TGD0623SSMX Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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