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TGD0653XSMX

Texas Instruments

TGD0653XSMX by Texas Instruments

TGD0653XSMX by Texas Instruments is a single Schottky mixer diode with gallium arsenide element material. It operates in the very high frequency to millimeter wave band, suitable for microwave applications. This surface-mount diode has a ceramic-metal-sealed cofired package body and wrap-around terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,503 parts In-Stock

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3,503

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Vyrian

USA . 3,023 parts In-Stock

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3,023

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,141 parts In-Stock

1+ parts

$0.010

100+ parts

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1,141

$0.010

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Parana Technologies

USA . 1,605 parts In-Stock

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$0.012

100+ parts

-

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$1.405

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1,605

$0.012

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$1.405

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DigiPath Technology Company

USA . 993 parts In-Stock

1+ parts

$0.013

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$0.012

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993

$0.013

$0.012

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ChromeModa Solutions

Germany . 2,710 parts In-Stock

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$0.013

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$0.011

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2,710

$0.013

$0.011

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IDEA Electronic Components Group

UK . 2,156 parts In-Stock

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$0.013

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$0.012

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2,156

$0.013

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$0.012

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One Stop Electronics

USA . 1,233 parts In-Stock

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$2.010

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1,233

$2.010

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Semicontronic

India . 762 parts In-Stock

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$2.010

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$1.960

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$1.950

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762

$2.010

$1.960

$1.950

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AZTECH Wire

Italy . 519 parts In-Stock

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$8.230

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519

$8.230

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Corphita

USA . 3,637 parts In-Stock

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3,637

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Corohmni

South Africa . 214 parts In-Stock

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Overview

Experience the superior quality and precision engineering of Texas Instruments with the TGD0653XSMX microwave mixer and detector diode. Ideal for very high frequency to millimeter wave band applications, this single-configured diode offers reliable performance and exceptional sensitivity. With a ceramic, metal-sealed co-fired package body material and Schottky diode technology, this product ensures durability and accuracy in your designs. Trust Texas Instruments for cutting-edge technology that delivers unparalleled value and unmatched benefits to customers in a variety of industries.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material combination provides excellent durability and reliability, making the product suitable for various environments and applications.

Config: SINGLE

Single configuration simplifies the overall design and integration process, reducing the chances of failure and making maintenance easier.

Frequency Band: VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND

Wide frequency band coverage allows for versatile use in different frequency ranges, providing flexibility in applications.

Surface Mount: YES

Surface mount capability enables easy and secure mounting on circuit boards, saving space and improving overall efficiency of the system.

Package Shape: ROUND

Round shape facilitates uniform distribution of signals and currents, reducing interference and improving signal quality.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process, making it easier to integrate the diode into the circuit.

Package Style (Meter): LONG FORM

Long form package style provides better thermal dissipation and ensures stable performance under high power conditions.

Terminal Position: END

End terminal position allows for easy access and connection, simplifying the installation process and reducing the chances of errors.

Case Connection: ISOLATED

Isolated case connection prevents unwanted interactions between different components, ensuring reliable and interference-free operation.

Diode Type: MIXER DIODE

Being a mixer diode, this product is specifically designed for high-frequency signal processing and mixing applications, providing accurate and efficient performance.

Technology: SCHOTTKY

Schottky technology ensures low forward voltage drop and fast switching speeds, making the diode ideal for high-frequency applications with minimal power losses.

Terminal Form: WRAP AROUND

Wrap-around terminal form ensures secure and reliable connections, reducing the chances of disconnection or signal loss.

Diode Element Material: GALLIUM ARSENIDE

Gallium arsenide material offers high electron mobility and low noise characteristics, making the diode suitable for high-frequency and low-noise applications.

Technical Specifications

Microwave Mixer & Detector Diodes TGD0653XSMX attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

GALLIUM ARSENIDE

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND

JESD-30 Code:

O-CELF-R2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

END

Trade Compliance

TGD0653XSMX Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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