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TGD0683SSMX

Texas Instruments

TGD0683SSMX by Texas Instruments

TGD0683SSMX by Texas Instruments is a single Schottky mixer diode with gallium arsenide element. It operates in very high frequency to millimeter wave band, suitable for surface mount applications. The package is ceramic-metal sealed co-fired, round shape with isolated case connection.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,445 parts In-Stock

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4,445

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Digiode

USA . 1,051 parts In-Stock

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1,051

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 540 parts In-Stock

1+ parts

$0.010

100+ parts

$0.010

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$0.010

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540

$0.010

$0.010

$0.010

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Parana Technologies

USA . 1,704 parts In-Stock

1+ parts

$0.171

100+ parts

-

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$1.509

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1,704

$0.171

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$1.509

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DigiPath Technology Company

USA . 84 parts In-Stock

1+ parts

$0.188

100+ parts

$0.173

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84

$0.188

$0.173

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ChromeModa Solutions

Germany . 5,612 parts In-Stock

1+ parts

$0.192

100+ parts

$0.157

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5,612

$0.192

$0.157

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IDEA Electronic Components Group

UK . 1,882 parts In-Stock

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$0.192

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$0.173

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1,882

$0.192

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$0.173

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Ampacity Inc.

Singapore . 943 parts In-Stock

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$1.010

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943

$1.010

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One Stop Electronics

USA . 225 parts In-Stock

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$1.010

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225

$1.010

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AZTECH Wire

Italy . 815 parts In-Stock

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$11.684

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815

$11.684

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Corphita

USA . 4,996 parts In-Stock

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4,996

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Corohmni

South Africa . 426 parts In-Stock

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426

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Overview

Discover the cutting-edge TGD0683SSMX by Texas Instruments, a top-quality microwave mixer and detector diode that offers exceptional performance in very high frequency to millimeter wave band applications. With a ceramic, metal-sealed cofired package and Schottky technology, this single-config diode delivers superior results for your projects. Trust in Texas Instruments' reputation for excellence in semiconductor manufacturing as you unlock the full potential of your designs with the TGD0683SSMX. Experience the value, benefits, and advantages this product brings to your work - elevate your projects to new heights with Texas Instruments.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material provides high durability and reliability, ensuring the diode can withstand harsh operating conditions.

Config: SINGLE

The single configuration simplifies the setup and reduces complexity, making it easier to integrate into systems.

Frequency Band: VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND

This wide frequency band range allows the diode to be used in various applications requiring different frequency ranges, increasing its versatility.

Surface Mount: YES

Being surface mountable makes the diode easy to install and saves space on the PCB.

Package Shape: ROUND

The round package shape is compact and helps in better heat dissipation, ensuring efficient performance.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces the chance of errors during installation.

Package Style (Meter): LONG FORM

The long form package style provides more surface area for heat dissipation, improving the diode's overall thermal performance.

Terminal Position: END

The end terminal position facilitates easy and direct connection to other components, enhancing the overall reliability of the system.

Case Connection: ISOLATED

The isolated case connection helps prevent interference from other components, ensuring the diode operates accurately without external disturbances.

Diode Type: MIXER DIODE

Being a mixer diode, it can efficiently mix two input signals, making it suitable for applications where signal mixing is required.

Technology: SCHOTTKY

The Schottky technology offers fast switching speeds and low forward voltage drop, making the diode ideal for high-frequency applications.

Terminal Form: WRAP AROUND

The wrap-around terminal form provides a secure connection, reducing the risk of signal loss or instability during operation.

Diode Element Material: GALLIUM ARSENIDE

Gallium arsenide material offers high electron mobility and excellent performance at high frequencies, making the diode suitable for very high-frequency applications.

Technical Specifications

Microwave Mixer & Detector Diodes TGD0683SSMX attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

GALLIUM ARSENIDE

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND

JESD-30 Code:

O-CELF-R2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

END

Trade Compliance

TGD0683SSMX Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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