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TGD0624XSMX

Texas Instruments

TGD0624XSMX by Texas Instruments

TGD0624XSMX by Texas Instruments is a single Schottky mixer diode with Gallium Arsenide element. It operates in the very high frequency to millimeter wave band, suitable for microwave applications. This surface-mount diode has a ceramic-metal-sealed co-fired package and wrap-around terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,877 parts In-Stock

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4,877

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Digiode

USA . 2,172 parts In-Stock

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2,172

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 315 parts In-Stock

1+ parts

$0.010

100+ parts

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315

$0.010

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Semicontronic

India . 230 parts In-Stock

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$0.010

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$0.010

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$0.010

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230

$0.010

$0.010

$0.010

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Parana Technologies

USA . 1,737 parts In-Stock

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$0.130

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-

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$1.479

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1,737

$0.130

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$1.479

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DigiPath Technology Company

USA . 375 parts In-Stock

1+ parts

$0.143

100+ parts

$0.132

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375

$0.143

$0.132

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ChromeModa Solutions

Germany . 5,062 parts In-Stock

1+ parts

$0.146

100+ parts

$0.120

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5,062

$0.146

$0.120

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IDEA Electronic Components Group

UK . 2,322 parts In-Stock

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$0.146

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$0.131

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2,322

$0.146

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$0.131

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One Stop Electronics

USA . 492 parts In-Stock

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$1.010

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492

$1.010

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AZTECH Wire

Italy . 338 parts In-Stock

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$15.939

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338

$15.939

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Corphita

USA . 3,260 parts In-Stock

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3,260

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Corohmni

South Africa . 455 parts In-Stock

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455

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Overview

Unleash the power of cutting-edge technology with the TGD0624XSMX by Texas Instruments. Manufactured with precision and excellence, this microwave mixer and detector diode is designed to deliver unparalleled performance in very high frequency to millimeter wave band applications. With a ceramic, metal-sealed cofired package body material and Schottky technology, this single-config diode offers reliability and accuracy like no other. Whether you're in the telecommunications, aerospace, or defense industry, this product's value, benefits, and advantages will elevate your projects to new heights. Elevate your game with Texas Instruments.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides excellent thermal stability and reliability for high-frequency applications, ensuring consistent performance over time.

Config: SINGLE

Single configuration simplifies the setup and operation of the mixer, making it user-friendly and efficient.

Frequency Band: VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND

Capable of operating in a wide frequency range, making it versatile and suitable for various applications in the high-frequency to millimeter wave bands.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards, saving space and enabling streamlined manufacturing processes.

Package Shape: ROUND

Round shape minimizes signal interference and improves signal transmission efficiency.

No. of Terminals: 2

Simple 2-terminal design simplifies the connection process and reduces the risk of connection errors.

Package Style (Meter): LONG FORM

Long form package style provides robustness and protection to the diode, ensuring durability in various operating conditions.

Terminal Position: END

End terminal position facilitates easy connection and integration within circuit systems.

Case Connection: ISOLATED

Isolated case connection prevents electrical interference and ensures signal integrity.

Diode Type: MIXER DIODE

Designed specifically for mixing applications, ensuring high performance and accuracy in signal mixing processes.

Technology: SCHOTTKY

Schottky technology offers low forward voltage drop and fast switching speeds, enhancing the efficiency and performance of the diode.

Terminal Form: WRAP AROUND

Wrap around terminal form provides secure and reliable connections, minimizing the risk of disconnection during operation.

Diode Element Material: GALLIUM ARSENIDE

Gallium arsenide offers high electron mobility and low noise characteristics, ideal for high-frequency applications requiring high sensitivity and precision.

Technical Specifications

Microwave Mixer & Detector Diodes TGD0624XSMX attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

GALLIUM ARSENIDE

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND

JESD-30 Code:

O-CELF-R2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

END

Trade Compliance

TGD0624XSMX Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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