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TGD0683XSMX

Texas Instruments

TGD0683XSMX by Texas Instruments

TGD0683XSMX by Texas Instruments is a single Schottky mixer diode with gallium arsenide element. It operates in the very high frequency to millimeter wave band, suitable for microwave applications. This surface-mount diode has a ceramic-metal-sealed cofired package with round shape and isolated case connection.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,867 parts In-Stock

1+ parts

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3,867

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Digiode

USA . 1,496 parts In-Stock

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1,496

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 52 parts In-Stock

1+ parts

$0.133

100+ parts

-

1k+ parts

$1.481

10k+ parts

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52

$0.133

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$1.481

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DigiPath Technology Company

USA . 807 parts In-Stock

1+ parts

$0.146

100+ parts

$0.134

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807

$0.146

$0.134

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ChromeModa Solutions

Germany . 4,317 parts In-Stock

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$0.149

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$0.122

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4,317

$0.149

$0.122

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IDEA Electronic Components Group

UK . 730 parts In-Stock

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$0.149

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$0.134

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730

$0.149

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$0.134

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Ampacity Inc.

Singapore . 890 parts In-Stock

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$1.010

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890

$1.010

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Semicontronic

India . 1,493 parts In-Stock

1+ parts

$2.010

100+ parts

$1.960

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$1.950

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1,493

$2.010

$1.960

$1.950

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One Stop Electronics

USA . 479 parts In-Stock

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$2.010

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479

$2.010

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AZTECH Wire

Italy . 600 parts In-Stock

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$18.607

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600

$18.607

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Corphita

USA . 871 parts In-Stock

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871

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Corohmni

South Africa . 100 parts In-Stock

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100

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Overview

Experience the superior quality and reliability of Texas Instruments with the TGD0683XSMX Microwave Mixer & Detector Diode. This high-performance diode offers very high frequency to millimeter wave band capabilities, making it ideal for a wide range of applications. With its ceramic, metal-sealed cofired package body material and Schottky technology, this diode provides unmatched value and benefits to customers. Trust Texas Instruments for cutting-edge technology and exceptional performance in every application.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides excellent thermal conductivity and can withstand high temperatures, making it ideal for high frequency applications.

Config: SINGLE

Single configuration ensures simplicity and ease of use in the device, making it suitable for various applications.

Frequency Band: VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND

Wide frequency band coverage allows for versatile use in different frequency ranges, making it a versatile choice for various applications.

Surface Mount: YES

Surface mount capability enables easy integration into circuit boards, saving space and enhancing overall device performance.

Package Shape: ROUND

Round package shape helps in efficient heat dissipation and compact design, enhancing overall performance and reliability of the device.

No. of Terminals: 2

Having only two terminals simplifies the connection process and reduces the chances of errors, ensuring better reliability in the device.

Package Style (Meter): LONG FORM

Long form package style provides more surface area for mounting components, improving stability and performance of the device.

Terminal Position: END

End terminal position makes it easier to connect the device in circuits, leading to improved usability and reliability in applications.

Case Connection: ISOLATED

Isolated case connection reduces interference and enhances signal integrity, making it a suitable choice for high precision applications.

Diode Type: MIXER DIODE

Specialized mixer diode type ensures efficient mixing of signals, making it ideal for frequency conversion applications in microwave systems.

Technology: SCHOTTKY

Schottky diode technology offers low forward voltage drop and fast switching speed, enhancing overall performance and efficiency of the device.

Terminal Form: WRAP AROUND

Wrap around terminal form simplifies the connection process and ensures secure connections, improving overall reliability of the device.

Diode Element Material: GALLIUM ARSENIDE

Gallium Arsenide material offers high electron mobility and low noise characteristics, making it suitable for high frequency and low noise applications.

Technical Specifications

Microwave Mixer & Detector Diodes TGD0683XSMX attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

GALLIUM ARSENIDE

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND

JESD-30 Code:

O-CELF-R2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

END

Trade Compliance

TGD0683XSMX Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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