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TGD0653SSMX

Texas Instruments

TGD0653SSMX by Texas Instruments

TGD0653SSMX by Texas Instruments is a single Schottky mixer diode with Gallium Arsenide element. Operating in very high frequency to millimeter wave band, it comes in a ceramic, metal-sealed co-fired package suitable for surface mount applications. With isolated case connection and wrap-around terminals, it is ideal for RF and microwave systems requiring high-frequency mixing and detection capabilities.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,549 parts In-Stock

1+ parts

-

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5,549

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Digiode

USA . 4,667 parts In-Stock

1+ parts

-

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4,667

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 393 parts In-Stock

1+ parts

$0.010

100+ parts

-

1k+ parts

-

10k+ parts

-

393

$0.010

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Parana Technologies

USA . 623 parts In-Stock

1+ parts

$0.068

100+ parts

-

1k+ parts

$1.440

10k+ parts

-

623

$0.068

-

$1.440

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DigiPath Technology Company

USA . 821 parts In-Stock

1+ parts

$0.074

100+ parts

$0.069

1k+ parts

-

10k+ parts

-

821

$0.074

$0.069

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IDEA Electronic Components Group

UK . 1,453 parts In-Stock

1+ parts

$0.076

100+ parts

-

1k+ parts

$0.068

10k+ parts

-

1,453

$0.076

-

$0.068

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ChromeModa Solutions

Germany . 782 parts In-Stock

1+ parts

$0.076

100+ parts

$0.062

1k+ parts

-

10k+ parts

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782

$0.076

$0.062

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One Stop Electronics

USA . 1,603 parts In-Stock

1+ parts

$1.010

100+ parts

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1,603

$1.010

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Semicontronic

India . 354 parts In-Stock

1+ parts

$2.010

100+ parts

$1.960

1k+ parts

$1.950

10k+ parts

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354

$2.010

$1.960

$1.950

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AZTECH Wire

Italy . 573 parts In-Stock

1+ parts

$5.532

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573

$5.532

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Corphita

USA . 1,880 parts In-Stock

1+ parts

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1,880

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Corohmni

South Africa . 109 parts In-Stock

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109

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Overview

Discover the TGD0653SSMX by Texas Instruments, a top-of-the-line Microwave Mixer & Detector Diode that delivers exceptional performance and reliability. Crafted with precision using the latest technology, this diode offers unparalleled quality and accuracy in very high frequency to millimeter wave band applications. With its durable ceramic, metal-sealed cofired package body material and Schottky technology, this diode ensures long-lasting functionality and precise results. Whether you're in the telecommunications, aerospace, or defense industries, the TGD0653SSMX provides unmatched value, benefits, and advantages for all your needs. Experience the difference with Texas Instruments.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material combination provides excellent durability and reliability, making the product suitable for high frequency and millimeter wave applications.

Config: SINGLE

Single configuration simplifies the design and integration process, making the product easy to use in various applications.

Frequency Band: VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND

The wide frequency band coverage allows for versatile usage in different frequency ranges, making it a versatile option for various applications.

Surface Mount: YES

Surface mount capability enables easy mounting on circuit boards, saving space and facilitating efficient assembly.

Package Shape: ROUND

Round package shape provides uniform distribution of components and facilitates better heat dissipation, ensuring optimal performance.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces the chances of wiring errors, making the product user-friendly.

Package Style (Meter): LONG FORM

The long form package style offers enhanced stability and protection for the components, ensuring long-term reliability.

Terminal Position: END

End terminal position allows for easy and convenient connection to external circuits, improving overall usability.

Case Connection: ISOLATED

Isolated case connection prevents interference and ensures accurate signal processing, making the product suitable for high-performance applications.

Diode Type: MIXER DIODE

Mixer diode type allows for efficient signal mixing and detection, making the product ideal for mixer applications in RF and microwave systems.

Technology: SCHOTTKY

Schottky diode technology offers high switching speeds and low forward voltage drop, enhancing overall performance and efficiency of the product.

Terminal Form: WRAP AROUND

Wrap-around terminal form provides strong mechanical connection and ensures reliable performance under various operating conditions.

Diode Element Material: GALLIUM ARSENIDE

The use of gallium arsenide as the diode element material offers high sensitivity and low noise characteristics, making the product suitable for demanding applications requiring high performance.

Technical Specifications

Microwave Mixer & Detector Diodes TGD0653SSMX attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

GALLIUM ARSENIDE

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND

JESD-30 Code:

O-CELF-R2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

END

Trade Compliance

TGD0653SSMX Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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