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1N5712-AZ2

STMicroelectronics

1N5712-AZ2 by STMicroelectronics

1N5712-AZ2 by STMicroelectronics is a Schottky mixer diode with 1.2 pF capacitance, operating from -65 to 200 °C. Ideal for VHF to UHF applications due to its isolated case connection and 0.43 W power dissipation capability. Its glass package and axial terminal position make it suitable for high-frequency circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,110 parts In-Stock

1+ parts

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3,110

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Digiode

USA . 889 parts In-Stock

1+ parts

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889

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Anansix

USA . 391 parts In-Stock

1+ parts

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391

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,571 parts In-Stock

1+ parts

$0.129

100+ parts

-

1k+ parts

$0.116

10k+ parts

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1,571

$0.129

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$0.116

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MKK Technologies

India . 1,495 parts In-Stock

1+ parts

$0.242

100+ parts

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1,495

$0.242

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DigiPath Technology Company

USA . 1,495 parts In-Stock

1+ parts

$0.242

100+ parts

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1,495

$0.242

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Native Components

USA . 792 parts In-Stock

1+ parts

$67.680

100+ parts

-

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$64.973

792

$67.680

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-

$64.973

Northwest PG Solutions

USA . 923 parts In-Stock

1+ parts

$74.448

100+ parts

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923

$74.448

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Corphita

USA . 2,190 parts In-Stock

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2,190

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Parana Technologies

USA . 1,371 parts In-Stock

1+ parts

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$0.154

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1,371

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$0.154

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Overview

Elevate your electronic designs with the 1N5712-AZ2 by STMicroelectronics, a top-of-the-line microwave mixer & detector diode. Crafted from high-quality materials and boasting cutting-edge Schottky technology, this diode offers unparalleled performance in very high frequency to ultra high frequency applications. With superior power dissipation capabilities and a wide operating temperature range, this diode is a reliable choice for demanding projects. Trust STMicroelectronics to deliver exceptional quality and innovation, ensuring your designs stand out from the rest.

Feature Benefit Bullets

Package Body Material: GLASS

The use of glass material ensures better durability and stability for the package, enhancing the overall reliability of the product.

Config: SINGLE

Single configuration simplifies the setup and operation of the product, making it user-friendly and easy to integrate into existing systems.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Wide frequency band coverage allows for versatile use across a range of applications requiring different frequency ranges.

Maximum Diode Capacitance: 1.2 pF

Low diode capacitance ensures minimal signal loss and distortion, making this product ideal for high-frequency signal processing.

Package Shape: ROUND

The round package shape offers efficient heat dissipation and compact design, contributing to the overall performance and form factor of the product.

No. of Terminals: 2

Having two terminals simplifies the connection process and reduces the chances of wiring errors, enhancing the overall usability of the product.

Package Style (Meter): LONG FORM

The long form package style provides better spacing for components, improving reliability and ease of maintenance for the product.

Maximum Operating Temperature: 200 °C

High maximum operating temperature tolerance allows for reliable performance in harsh operating conditions without risk of overheating or component failure.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures the product can function effectively in a wide range of environmental conditions, making it versatile and reliable.

Terminal Position: AXIAL

Axial terminal position enables easy and secure connections, enhancing the overall stability and reliability of the product during operation.

Case Connection: ISOLATED

Isolated case connection helps prevent signal interference and enhances the overall signal quality and performance of the product.

Maximum Power Dissipation: 0.43 W

High maximum power dissipation capability allows the product to handle higher power levels without risk of damage, ensuring consistent and reliable performance.

Diode Type: MIXER DIODE

Mixer diode type offers high-speed signal mixing capabilities, making this product suitable for various signal processing and modulation applications.

Technology: SCHOTTKY

Schottky technology provides fast switching speed and low power loss, enhancing the efficiency and performance of the product in high-frequency applications.

Terminal Form: WIRE

Wire terminal form allows for easy and secure connections, ensuring stable performance and reducing the chances of signal loss or interference.

Diode Element Material: SILICON

Silicon diode element material offers high reliability and performance consistency, making this product a durable and long-lasting choice for signal processing applications.

Technical Specifications

Microwave Mixer & Detector Diodes 1N5712-AZ2 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from STMicroelectronics

Specs

Additional Features:

MATCHED BATCH AVAILABLE

Case Connection:

ISOLATED

Config:

SINGLE

Maximum Diode Capacitance:

1.2 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.43 W

Qualification:

Not Qualified

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

1N5712-AZ2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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