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1N5712-AZ1

STMicroelectronics

1N5712-AZ1 by STMicroelectronics

1N5712-AZ1 by STMicroelectronics is a Schottky mixer diode with 1.2 pF capacitance, operating from -65 °C to 200°C. It is designed for very high frequency to ultra high frequency applications, featuring a glass package and isolated case connection. With a max power dissipation of 0.43 W, it is suitable for microwave circuits requiring high-frequency signal detection.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,703 parts In-Stock

1+ parts

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4,703

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Digiode

USA . 2,211 parts In-Stock

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2,211

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Anansix

USA . 509 parts In-Stock

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509

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,720 parts In-Stock

1+ parts

$0.166

100+ parts

-

1k+ parts

$0.149

10k+ parts

-

1,720

$0.166

-

$0.149

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MKK Technologies

India . 909 parts In-Stock

1+ parts

$0.311

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-

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909

$0.311

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DigiPath Technology Company

USA . 909 parts In-Stock

1+ parts

$0.311

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-

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909

$0.311

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Native Components

USA . 686 parts In-Stock

1+ parts

$500.475

100+ parts

$490.466

1k+ parts

$485.461

10k+ parts

$480.456

686

$500.475

$490.466

$485.461

$480.456

Northwest PG Solutions

USA . 2,197 parts In-Stock

1+ parts

$550.523

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2,197

$550.523

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Parana Technologies

USA . 2,244 parts In-Stock

1+ parts

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$0.198

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2,244

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$0.198

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Corphita

USA . 1,515 parts In-Stock

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1,515

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Overview

Discover the cutting-edge performance and reliability of the 1N5712-AZ1 by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-quality microwave mixer & detector diodes that excel in very high frequency to ultra high frequency applications. With a package body material of glass and a maximum operating temperature of 200 °C, this Schottky diode offers unmatched precision and efficiency. Elevate your projects with the unparalleled value and benefits that the 1N5712-AZ1 provides, making it a must-have component for any high-frequency application.

Feature Benefit Bullets

Package Body Material: GLASS

Glass package provides excellent protection for the diode, ensuring long-term reliability and stability.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Allows for a wide range of frequency applications, making this diode suitable for various high-frequency signal processing needs.

Maximum Diode Capacitance: 1.2 pF

Low diode capacitance helps in minimizing signal distortion and loss, resulting in high-performance signal mixing and detection.

Package Shape: ROUND

Round package shape provides compactness and ease of integration into circuit designs.

No. of Terminals: 2

Simple two-terminal configuration simplifies the integration process and reduces complexity in circuit layouts.

Maximum Operating Temperature: 200 °C

High maximum operating temperature allows for reliable operation in demanding environmental conditions.

Minimum Operating Temperature: -65 °C

Wide temperature range ensures that the diode can function effectively in both extreme cold and hot environments.

Maximum Power Dissipation: 0.43 W

High power dissipation capability enables the diode to handle high power levels without compromising performance.

Diode Type: MIXER DIODE

Specifically designed as a mixer diode, making it ideal for signal mixing applications in microwave circuits.

Technology: SCHOTTKY

Schottky technology offers efficient signal processing and low noise characteristics, contributing to overall system performance.

Terminal Form: WIRE

Wire terminal form provides ease of connection and flexibility in circuit assembly.

Diode Element Material: SILICON

Silicon material offers good reliability and consistent performance, ensuring long-term stability in signal processing applications.

Technical Specifications

Microwave Mixer & Detector Diodes 1N5712-AZ1 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from STMicroelectronics

Specs

Additional Features:

MATCHED BATCH AVAILABLE

Case Connection:

ISOLATED

Config:

SINGLE

Maximum Diode Capacitance:

1.2 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.43 W

Qualification:

Not Qualified

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

1N5712-AZ1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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