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MMBD452LT3

Onsemi

MMBD452LT3 by Onsemi

MMBD452LT3 by Onsemi is a microwave mixer & detector diode with 2 elements in series connected configuration. It operates in very high frequency to ultra high frequency bands, featuring a max diode capacitance of 1.5 pF. This Schottky technology diode is ideal for applications requiring small outline surface mount packages and dual terminal positions.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,915 parts In-Stock

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Vyrian

USA . 1,393 parts In-Stock

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1,393

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TANS Electronics

Latvia . 8,247 parts In-Stock

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Kulean Microsystems

USA . 6,660 parts In-Stock

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Problanco Electronics

Mexico . 4,861 parts In-Stock

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SupplyDigital Components

Austria . 3,175 parts In-Stock

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Corphita

USA . 2,032 parts In-Stock

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UHIMA Technologies

Türkiye . 624 parts In-Stock

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Corohmni

South Africa . 65 parts In-Stock

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Overview

Enhance your electronic projects with the MMBD452LT3 by Onsemi! As a leading manufacturer in the industry, Onsemi delivers top-quality Microwave Mixer & Detector Diodes that are perfect for very high frequency to ultra high frequency applications. This series connected, center tap diode offers superior performance and reliability, making it ideal for a wide range of uses. With its small outline package design and maximum power dissipation of 0.225W, this diode is guaranteed to provide value and benefits to all customers looking for high-performance components. Upgrade your projects today with the MMBD452LT3 from Onsemi!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, ensuring long-term reliability.

Config: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

The series connected configuration with center tap and 2 elements allows for efficient signal mixing and detection, improving overall performance.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Covering a wide frequency band from very high to ultra high frequencies, this product is versatile and suitable for a variety of applications.

Maximum Diode Capacitance: 1.5 pF

With a low maximum diode capacitance of 1.5 pF, this product helps in minimizing signal distortion and maintaining high signal integrity.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration and compact layout design, making it space-efficient in circuit assemblies.

No. of Terminals: 3

Having 3 terminals provides flexibility in connecting the diode to external circuitry, enabling customization and optimization of system performance.

Terminal Finish: TIN LEAD

The use of tin lead as terminal finish ensures good conductivity and solderability, facilitating secure connections in electronic circuits.

Maximum Power Dissipation: 0.225 W

With a maximum power dissipation of 0.225 W, this product can handle high power levels without overheating, ensuring reliable operation under varying conditions.

Diode Type: MIXER DIODE

Being a mixer diode, this product is specifically designed for signal mixing applications, offering high linearity and low distortion for accurate signal processing.

Technology: SCHOTTKY

Utilizing Schottky technology, this product features fast switching speeds and low forward voltage drop, enhancing overall performance in high-frequency applications.

Terminal Form: GULL WING

The gull wing terminal form provides secure mechanical support and easy surface mounting, simplifying the assembly process and improving overall reliability.

No. of Elements: 2

Having 2 diode elements allows for more complex signal processing capabilities, enabling enhanced performance and functionality in microwave applications.

Diode Element Material: SILICON

The use of silicon as the diode element material ensures high efficiency, stability, and reliability in signal detection and mixing processes.

Technical Specifications

Microwave Mixer & Detector Diodes MMBD452LT3 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Maximum Diode Capacitance:

1.5 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MMBD452LT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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